Presentation 2015-12-22
Evaluation of GaN by using Laser-induced THz emission
Yuji Sakai, Iwao Kawayama, Hidetoshi Nakanishi, Masayoshi Tonouchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Wide-gap semiconductors have received significant attention for their advantages over existing semiconductors. Here, We report studies on laser-induced terahertz (THz) emission from GaN. We found that the THz emission is enhanced by defects related to yellow luminescence, and this phenomenon is explained through the modification of band structures in the surface depletion layer owing to trapped electrons at defect sites. Our results demonstrate that the surface potential in a GaN surface could be detected by laser-induced THz emission.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Terahertz / GaN / Surface Potential
Paper # ED2015-106
Date of Issue 2015-12-14 (ED)

Conference Information
Committee ED
Conference Date 2015/12/21(2days)
Place (in Japanese) (See Japanese page)
Place (in English) RIEC, Tohoku Univ
Topics (in Japanese) (See Japanese page)
Topics (in English) Millimeter-wave, terahertz-wave devices and systems
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of GaN by using Laser-induced THz emission
Sub Title (in English)
Keyword(1) Terahertz
Keyword(2) GaN
Keyword(3) Surface Potential
1st Author's Name Yuji Sakai
1st Author's Affiliation Osaka University(Osaka Univ.)
2nd Author's Name Iwao Kawayama
2nd Author's Affiliation Osaka University(Osaka Univ.)
3rd Author's Name Hidetoshi Nakanishi
3rd Author's Affiliation SCREEN Holdings(SCREEN)
4th Author's Name Masayoshi Tonouchi
4th Author's Affiliation Osaka University(Osaka Univ.)
Date 2015-12-22
Paper # ED2015-106
Volume (vol) vol.115
Number (no) ED-387
Page pp.pp.89-92(ED),
#Pages 4
Date of Issue 2015-12-14 (ED)