| Presentation | 2015-12-14 Characterization of GaxSn1-xO thin film by the mist CVD method Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Thin films of GaxSn1-xO (GTO) for an active layer of thin film transistor (TFT) were deposited with different substrate temperature and deposition time on glass substrates by the mist CVD method with non-vacuum process. Optical transmittances of GTO thin film were higher than 80% for all deposition time. Sheet resistances of GTO thin films were decreased deposited at 450℃, and 500℃ with longer deposition time. Relationships between the sheet resistance and deposition time were not inverse proportion. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Oxide semiconductor / GaSnO thin film / mist CVD |
| Paper # | EID2015-16,SDM2015-99 |
| Date of Issue | 2015-12-07 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM |
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| Conference Date | 2015/12/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ryukoku University, Avanti Kyoto Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, and Display Technology |
| Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Samsung) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of GaxSn1-xO thin film by the mist CVD method |
| Sub Title (in English) | |
| Keyword(1) | Oxide semiconductor |
| Keyword(2) | GaSnO thin film |
| Keyword(3) | mist CVD |
| 1st Author's Name | Masahiro Yuge |
| 1st Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 2nd Author's Name | Junji Ogawa |
| 2nd Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 3rd Author's Name | Tosihiro Yosioka |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 4th Author's Name | Yuta Kato |
| 4th Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 5th Author's Name | Tokiyosi Matsuda |
| 5th Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| 6th Author's Name | Mutsumi Kimura |
| 6th Author's Affiliation | Ryukoku University(Ryukoku Univ) |
| Date | 2015-12-14 |
| Paper # | EID2015-16,SDM2015-99 |
| Volume (vol) | vol.115 |
| Number (no) | EID-362,SDM-363 |
| Page | pp.pp.31-34(EID), pp.31-34(SDM), |
| #Pages | 4 |
| Date of Issue | 2015-12-07 (EID, SDM) |