Presentation | 2015-12-14 Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film transistor (TFT). Thin films of SnO2 / Al2O3 were deposited by RF magnetron sputtering, and those sheet resistance and optical transmittance were evaluated. Optical transmittances with SnO2 / Al2O3 thin film were higher than 80% in visible range, therefore SnO2 / Al2O3 thin film were transparent. SnO2 / Al2O3 thin film transistor were fabricated on Si wafer. We found the operation of SnO2 / Al2O3 thin film transistor. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RF magnetron sputtering / SnO2 / Al2O3(ATO) thin film / oxide semiconductor |
Paper # | EID2015-20,SDM2015-103 |
Date of Issue | 2015-12-07 (EID, SDM) |
Conference Information | |
Committee | EID / SDM |
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Conference Date | 2015/12/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Ryukoku University, Avanti Kyoto Hall |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Si and Si-related Materials and Devices, and Display Technology |
Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Yuzou Oono(Univ. of Tsukuba) |
Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) |
Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Tatsuya Kunikiyo(Tohoku Univ.) |
Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Samsung) / Tadashi Yamaguchi(Renesas) |
Paper Information | |
Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor |
Sub Title (in English) | |
Keyword(1) | RF magnetron sputtering |
Keyword(2) | SnO2 / Al2O3(ATO) thin film |
Keyword(3) | oxide semiconductor |
1st Author's Name | Junji Ogawa |
1st Author's Affiliation | Ryukoku University(Ryukoku Univ) |
2nd Author's Name | Masahiro Yuge |
2nd Author's Affiliation | Ryukoku University(Ryukoku Univ) |
3rd Author's Name | Tosihiro Yosioka |
3rd Author's Affiliation | Ryukoku University(Ryukoku Univ) |
4th Author's Name | Tokiyosi Matsuda |
4th Author's Affiliation | Ryukoku University(Ryukoku Univ) |
5th Author's Name | Mutsumi Kimura |
5th Author's Affiliation | Ryukoku University(Ryukoku Univ) |
Date | 2015-12-14 |
Paper # | EID2015-20,SDM2015-103 |
Volume (vol) | vol.115 |
Number (no) | EID-362,SDM-363 |
Page | pp.pp.49-52(EID), pp.49-52(SDM), |
#Pages | 4 |
Date of Issue | 2015-12-07 (EID, SDM) |