| Presentation | 2015-12-14 Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and poly-Si due to their high field effect mobility even in the amorphous state with high optical transmittance in the visible range. In this study, among the components contained in the InGaZnO4 (IGZO), In2O3 was deposited and evaluated for the possible cause of high field effect mobility. Optical transmittance and sheet resistance of In2O3 thin film were evaluated and applied for thin film transistor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RF magnetron sputtering / Oxide semiconductor / InGaZnO4 (IGZO) |
| Paper # | EID2015-15,SDM2015-98 |
| Date of Issue | 2015-12-07 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM |
|---|---|
| Conference Date | 2015/12/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ryukoku University, Avanti Kyoto Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, and Display Technology |
| Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Samsung) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of In2O3 film deposited by RF magnetron sputtering |
| Sub Title (in English) | |
| Keyword(1) | RF magnetron sputtering |
| Keyword(2) | Oxide semiconductor |
| Keyword(3) | InGaZnO4 (IGZO) |
| 1st Author's Name | Toshihiro Yoshioka |
| 1st Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 2nd Author's Name | Junji Ogawa |
| 2nd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 3rd Author's Name | Masahiro Yuge |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 4th Author's Name | Tokiyoshi Matsuda |
| 4th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 5th Author's Name | Mutsumi Kimura |
| 5th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| Date | 2015-12-14 |
| Paper # | EID2015-15,SDM2015-98 |
| Volume (vol) | vol.115 |
| Number (no) | EID-362,SDM-363 |
| Page | pp.pp.27-30(EID), pp.27-30(SDM), |
| #Pages | 4 |
| Date of Issue | 2015-12-07 (EID, SDM) |