| Presentation | 2015-12-14 Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas Takashi Kojiri, Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We evaluated the properties of newly developed SiNx etch gas (SSY525). The gas indicated high selectivity as 30 ~ 60 for Poly-Si, and over 100 for SiO2, respectively. We introduced SSY525 to fabricate the FinFET which is the typical structure of Three Dimensional Metal Oxide Semiconductor Field Effect Transistors (3D-MOSFETs) and requires the high selectivity etching for the fabrication process. The 3D structure of FinFET fabricated by the etching process with SSY525 is superior to that with the CH3F gas which is conventionally used for the SiNx etching. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FinFET / Spacer Etch / Etching Gas |
| Paper # | EID2015-9,SDM2015-92 |
| Date of Issue | 2015-12-07 (EID, SDM) |
| Conference Information | |
| Committee | EID / SDM |
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| Conference Date | 2015/12/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ryukoku University, Avanti Kyoto Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Si and Si-related Materials and Devices, and Display Technology |
| Chair | Tomokazu Shiga(Univ. of Electro-Comm.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Mutsumi Kimura(NTT) / Yuko Kominami(Tokyo Inst. of Tech.) / Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) / Takeshi Okuno(Samsung) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas |
| Sub Title (in English) | |
| Keyword(1) | FinFET |
| Keyword(2) | Spacer Etch |
| Keyword(3) | Etching Gas |
| 1st Author's Name | Takashi Kojiri |
| 1st Author's Affiliation | Tohoku University/ZEON Corporation(Tohoku Univ./ZEON) |
| 2nd Author's Name | Tomoyuki Suwa |
| 2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 3rd Author's Name | Keiichi Hashimoto |
| 3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 4th Author's Name | Akinobu Teramoto |
| 4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 5th Author's Name | Rihito Kuroda |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| 6th Author's Name | Shigetoshi Sugawa |
| 6th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2015-12-14 |
| Paper # | EID2015-9,SDM2015-92 |
| Volume (vol) | vol.115 |
| Number (no) | EID-362,SDM-363 |
| Page | pp.pp.1-4(EID), pp.1-4(SDM), |
| #Pages | 4 |
| Date of Issue | 2015-12-07 (EID, SDM) |