Presentation | 2015-11-19 Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping Koichi Endo, Tomonori Nakamura, Koji Nakamae, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We investigate the temperature variation of the top surface image of power metal-oxide semiconductor field effect transistor (MOSFET) under unclamped inductive switching (UIS) conditions. We perform measurements using the optical probed thermoreflectance image mapping. (OPTIM) technique (using electro optical frequency mapping: EOFM). The measured data obtained by the thermoreflectance mapping was found to be sensitive to changes in temperature as opposed to the temperature distribution. These results suggest that the OPTIM method is better able to measure the heat generation distribution, because it has a higher time-resolution than that of thermography. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Power Device / Electro-Optical Probing (EO Probing) / reflectivity / Thermal Observation |
Paper # | R2015-58 |
Date of Issue | 2015-11-12 (R) |
Conference Information | |
Committee | R |
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Conference Date | 2015/11/19(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Hiroyasu Mawatari(NTT) |
Vice Chair | Tetsushi Yuge(National Defense Academy) |
Secretary | Tetsushi Yuge(Fujitsu) |
Assistant | Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) |
Paper Information | |
Registration To | Technical Committee on Reliability |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping |
Sub Title (in English) | |
Keyword(1) | Power Device |
Keyword(2) | Electro-Optical Probing (EO Probing) |
Keyword(3) | reflectivity |
Keyword(4) | Thermal Observation |
1st Author's Name | Koichi Endo |
1st Author's Affiliation | Toshiba Corporation(Toshiba Corp.) |
2nd Author's Name | Tomonori Nakamura |
2nd Author's Affiliation | Hamamatsu Photonics K.K.(Hamamatsu Photonics K.K.) |
3rd Author's Name | Koji Nakamae |
3rd Author's Affiliation | Osaka University(Osaka Univ.) |
Date | 2015-11-19 |
Paper # | R2015-58 |
Volume (vol) | vol.115 |
Number (no) | R-313 |
Page | pp.pp.11-16(R), |
#Pages | 6 |
Date of Issue | 2015-11-12 (R) |