Presentation 2015-11-19
Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping
Koichi Endo, Tomonori Nakamura, Koji Nakamae,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We investigate the temperature variation of the top surface image of power metal-oxide semiconductor field effect transistor (MOSFET) under unclamped inductive switching (UIS) conditions. We perform measurements using the optical probed thermoreflectance image mapping. (OPTIM) technique (using electro optical frequency mapping: EOFM). The measured data obtained by the thermoreflectance mapping was found to be sensitive to changes in temperature as opposed to the temperature distribution. These results suggest that the OPTIM method is better able to measure the heat generation distribution, because it has a higher time-resolution than that of thermography.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power Device / Electro-Optical Probing (EO Probing) / reflectivity / Thermal Observation
Paper # R2015-58
Date of Issue 2015-11-12 (R)

Conference Information
Committee R
Conference Date 2015/11/19(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
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Topics (in English)
Chair Hiroyasu Mawatari(NTT)
Vice Chair Tetsushi Yuge(National Defense Academy)
Secretary Tetsushi Yuge(Fujitsu)
Assistant Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.)

Paper Information
Registration To Technical Committee on Reliability
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of Power MOSFET under UIS avalanche breakdown condition using thermoreflectance image mapping
Sub Title (in English)
Keyword(1) Power Device
Keyword(2) Electro-Optical Probing (EO Probing)
Keyword(3) reflectivity
Keyword(4) Thermal Observation
1st Author's Name Koichi Endo
1st Author's Affiliation Toshiba Corporation(Toshiba Corp.)
2nd Author's Name Tomonori Nakamura
2nd Author's Affiliation Hamamatsu Photonics K.K.(Hamamatsu Photonics K.K.)
3rd Author's Name Koji Nakamae
3rd Author's Affiliation Osaka University(Osaka Univ.)
Date 2015-11-19
Paper # R2015-58
Volume (vol) vol.115
Number (no) R-313
Page pp.pp.11-16(R),
#Pages 6
Date of Issue 2015-11-12 (R)