Presentation 2015-12-03
A Circuit Area-Aware Bit-Write Reduction Code Generation for Non-Volatile Memories
Masashi Tawada, Shinji Kimura, Masao Yanagisawa, Nozomu Togawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recently, due to low leakage power and non-volatility, the non-volatile memory technology has advanced remarkably. However, there are two potential problems. First, high energy is required in writing data to a non-volatile memory. Secondly, write-endurance of non-volatile memories is low. Bit-level write-reduction methods solve the above problems but their encoders/decoders' area are too much large. In this paper, we propose an area-aware bit-level write-reduction code generation algorithm to solve the above problems. We also propose an evaluation system to generate small-sized encoders. Experimental results confirm the efficiency of our encoder design.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Non-volatile memory / Writing-reduction code / Encoding/decoding
Paper # VLD2015-76,DC2015-72
Date of Issue 2015-11-24 (VLD, DC)

Conference Information
Committee VLD / DC / IPSJ-SLDM / CPSY / RECONF / ICD / CPM
Conference Date 2015/12/1(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagasaki Kinro Fukushi Kaikan
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Gaia 2015 -New Field of VLSI Design-
Chair Yusuke Matsunaga(Kyushu Univ.) / Nobuyasu Kanekawa(Hitachi) / Masahiro Fukui(Ritsumeikan Univ.) / Yasuhiko Nakashima(NAIST) / Minoru Watanabe(Shizuoka Univ.) / Minoru Fujishima(Hiroshima Univ.) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Takashi Takenana(NEC) / Michiko Inoue(NAIST) / / Koji Nakano(Hiroshima Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Masato Motomura(Hokkaido Univ.) / Yuichiro Shibata(Nagasaki Univ.) / Hideto Hidaka(Renesas) / Fumihiko Hirose(Yamagata Univ.)
Secretary Takashi Takenana(Ritsumeikan Univ.) / Michiko Inoue(Fujitsu Labs.) / (RTRI) / Koji Nakano(Kyoto Sangyo Univ.) / Hidetsugu Irie(Sharp) / Masato Motomura(Kitakyushu City Univ.) / Yuichiro Shibata(Toshiba) / Hideto Hidaka(Fujitsu Labs.) / Fumihiko Hirose(NII)
Assistant Ittetsu Taniguchi(Ritsumeikan Univ.) / / / Shinya Takameda(NAIST) / Takeshi Ohkawa(Utsunomiya Univ.) / Kazuya Tanikagawa(Hiroshima City Univ.) / Takefumi Miyoshi(e-trees.Japan) / Makoto Takamiya(Univ. of Tokyo) / Hiroe Iwasaki(NTT) / Takashi Hashimoto(Panasonic) / Hiroyuki Ito(Tokyo Inst. of Tech.) / Pham Konkuha(Univ. of Electro-Comm.) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Special Interest Group on System and LSI Design Methodology / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Integrated Circuits and Devices / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Circuit Area-Aware Bit-Write Reduction Code Generation for Non-Volatile Memories
Sub Title (in English)
Keyword(1) Non-volatile memory
Keyword(2) Writing-reduction code
Keyword(3) Encoding/decoding
1st Author's Name Masashi Tawada
1st Author's Affiliation Waseda University(Waseda Univ.)
2nd Author's Name Shinji Kimura
2nd Author's Affiliation Waseda University(Waseda Univ.)
3rd Author's Name Masao Yanagisawa
3rd Author's Affiliation Waseda University(Waseda Univ.)
4th Author's Name Nozomu Togawa
4th Author's Affiliation Waseda University(Waseda Univ.)
Date 2015-12-03
Paper # VLD2015-76,DC2015-72
Volume (vol) vol.115
Number (no) VLD-338,DC-339
Page pp.pp.249-253(VLD), pp.249-253(DC),
#Pages 5
Date of Issue 2015-11-24 (VLD, DC)