Presentation 2015-11-27
Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate
Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki,
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Abstract(in English)
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Conference Information
Committee ED / LQE / CPM
Conference Date 2015/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka City University Media Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.)
Secretary Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate
Sub Title (in English)
Keyword(1)
1st Author's Name Dariush H. Zadeh
1st Author's Affiliation NTT(NTT)
2nd Author's Name Tanabe Shinichi
2nd Author's Affiliation NTT(NTT)
3rd Author's Name Watanabe Noriyuki
3rd Author's Affiliation NTT(NTT)
4th Author's Name Matsuzaki Hideaki
4th Author's Affiliation NTT(NTT)
Date 2015-11-27
Paper #
Volume (vol) vol.115
Number (no) ED-329,CPM-330,LQE-331
Page pp.pp.-(),
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