Presentation	2015-11-27 Behavior of Plasma-induced Defects in GaN Yusuke Koga, Seiji Nakamura, Tsugunori Okumura,
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Conference Information
Committee	ED / LQE / CPM
Conference Date	2015/11/26(2days)
Place (in Japanese)	(See Japanese page)
Place (in English)	Osaka City University Media Center
Topics (in Japanese)	(See Japanese page)
Topics (in English)	Nitride Semiconductor Devices, Materials, Related Technologies
Chair	Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.)
Vice Chair	Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.)
Secretary	Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT)
Assistant	Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To	Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Behavior of Plasma-induced Defects in GaN
Sub Title (in English)	Comparison between n- and p type GaN
Keyword(1)
1st Author's Name	Yusuke Koga
1st Author's Affiliation	Tokyo Metropolitan University(TMU)
2nd Author's Name	Seiji Nakamura
2nd Author's Affiliation	Tokyo Metropolitan University(TMU)
3rd Author's Name	Tsugunori Okumura
3rd Author's Affiliation	Tokyo Metropolitan University(TMU)
Date	2015-11-27
Paper #
Volume (vol)	vol.115
Number (no)	ED-329,CPM-330,LQE-331
Page	pp.pp.-(),
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