Presentation 2015-11-26
Plasmonics with Aluminum applied to emission enhancements
Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada, Mitsuru Funato, Yoichi Kawakami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The use of “Plasmonics” is one very promising method to improve the emission efficiencies of light-emitting diodes (LEDs). In 2004, we reported for the first time large photoluminescence (PL) enhancements from InGaN/GaN quantum well (QW) materials coated with silver thin films. Aluminum is also a very advantageous metal to use SP resonance especially at deep UV wavelength region. We succeeded the enhancements of deep UV emission around ~260 nm from AlGaN/AlN QWs with Al coating. Moreover, we obtained unexpectedly large enhancement for green emissions from InGaN/GaN using Al film. The enhancement ratio reached 80, which was much larger than the previously reported enhancements on silver films. The resulting large enhancement should be attributed to an ~20-fold enhancement of the excitation efficiency and ~4-fold enhancement of the emission efficiency by the excitation and emission spectra. We concluded that the resonance between the excitation light and the SP on the Al surface should improve the excitation efficiency, i.e., the light absorption efficiency. This result suggests that the Al films have an extraordinary photon confinement effect, which are unique properties of plasmonics with Al and should be useful for new and wider applications.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Plasmonics / Surface plasmon / LED / InGaN / AlGaN / aluminum / Light-emitting devices
Paper # ED2015-80,CPM2015-115,LQE2015-112
Date of Issue 2015-11-19 (ED, CPM, LQE)

Conference Information
Committee ED / LQE / CPM
Conference Date 2015/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka City University Media Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.)
Secretary Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Plasmonics with Aluminum applied to emission enhancements
Sub Title (in English)
Keyword(1) Plasmonics
Keyword(2) Surface plasmon
Keyword(3) LED
Keyword(4) InGaN
Keyword(5) AlGaN
Keyword(6) aluminum
Keyword(7) Light-emitting devices
1st Author's Name Koichi Okamoto
1st Author's Affiliation Kyushu University(Kyushu Univ.)
2nd Author's Name Kazutaka Tateishi
2nd Author's Affiliation Kyushu University(Kyushu Univ.)
3rd Author's Name Shun Kawamoto
3rd Author's Affiliation Kyushu University(Kyushu Univ.)
4th Author's Name Haruku Nishida
4th Author's Affiliation Kyushu University(Kyushu Univ.)
5th Author's Name Kaoru Tamada
5th Author's Affiliation Kyushu University(Kyushu Univ.)
6th Author's Name Mitsuru Funato
6th Author's Affiliation Kyoto University(Kyoto Univ.)
7th Author's Name Yoichi Kawakami
7th Author's Affiliation Kyoto University(Kyoto Univ.)
Date 2015-11-26
Paper # ED2015-80,CPM2015-115,LQE2015-112
Volume (vol) vol.115
Number (no) ED-329,CPM-330,LQE-331
Page pp.pp.63-68(ED), pp.63-68(CPM), pp.63-68(LQE),
#Pages 6
Date of Issue 2015-11-19 (ED, CPM, LQE)