| Presentation | 2015-11-27 Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source P.Pungboon Pansila, Kensaku Kanomata, Bashir Ahammad, Shigeru Kubota, Fumihiko Hirose, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Temperature-controlled ALD of GaN on Si(100) is demonstrated with TMG and plasma-excited NH3. The TMG adsorption and its reaction with NH3 plasma are investigated by IR abosption spectroscopy and X-ray photoelectron spectroscopy. It is found that the TMG saturation has the highest adsorption density at RT and the plasma-excited NH3 is effective in nitriding adsorbed TMG at 115 °C. The temperature-controlled ALD for GaN films is performed using TMG adsorption at RT and the plasma-excited NH3 treatment at the substrate temperature of 115 °C. The deposition rate of 0.045 nm /cycle is obtained in the present method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium nitrideTMGammonia plasmatemperature-controlled ALD |
| Paper # | ED2015-81,CPM2015-116,LQE2015-113 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| Sub Title (in English) | |
| Keyword(1) | Gallium nitrideTMGammonia plasmatemperature-controlled ALD |
| 1st Author's Name | P.Pungboon Pansila |
| 1st Author's Affiliation | Yamagata Univ(Yamagata Univ) |
| 2nd Author's Name | Kensaku Kanomata |
| 2nd Author's Affiliation | Yamagata Univ(Yamagata Univ) |
| 3rd Author's Name | Bashir Ahammad |
| 3rd Author's Affiliation | Yamagata Univ(Yamagata Univ) |
| 4th Author's Name | Shigeru Kubota |
| 4th Author's Affiliation | Yamagata Univ(Yamagata Univ) |
| 5th Author's Name | Fumihiko Hirose |
| 5th Author's Affiliation | Yamagata Univ(Yamagata Univ) |
| Date | 2015-11-27 |
| Paper # | ED2015-81,CPM2015-116,LQE2015-113 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.69-72(ED), pp.69-72(CPM), pp.69-72(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |