| Presentation | 2015-11-26 Growth of AlN with annealing on different misoriented c-plane sapphire Shuhei Suzuki, Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu, Hiroyuki Fukuyama, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlN is promising for applications in the deep ultraviolet region because of its wide direct band-gap and excellent thermal and chemical stabilities. High quality AlN epitaxial film on sapphire substrates is necessary for obtaining high efficiency devices. The control of interface between AlN and sapphire substrate is important， because high density of edge-type dislocation will generate in AlN films which cause by uniformity of sapphire step structure. In this work， we changed thermal cleaning temperature and misoriented c-plane sapphire to control of crystallinity and domain structure of AlN. As misoriented angle being increased， the FWHM of XRC(0002) plane tended to deteriorate， but the FWHM of XRC(10-12) plane improve. It was demonstrated that the change of these XRC FWHM was caused by surface step structure of sapphire substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / MOVPE / annealing / N2-CO / sapphire |
| Paper # | ED2015-69,CPM2015-104,LQE2015-101 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of AlN with annealing on different misoriented c-plane sapphire |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | MOVPE |
| Keyword(3) | annealing |
| Keyword(4) | N2-CO |
| Keyword(5) | sapphire |
| 1st Author's Name | Shuhei Suzuki |
| 1st Author's Affiliation | Mie University(Mie Univ.) |
| 2nd Author's Name | Chia-Hung Lin |
| 2nd Author's Affiliation | Mie University(Mie Univ.) |
| 3rd Author's Name | Hideto Miyake |
| 3rd Author's Affiliation | Mie University(Mie Univ.) |
| 4th Author's Name | Kazumasa Hiramatsu |
| 4th Author's Affiliation | Mie University(Mie Univ.) |
| 5th Author's Name | Hiroyuki Fukuyama |
| 5th Author's Affiliation | Tohoku University(Tohoku Univ.) |
| Date | 2015-11-26 |
| Paper # | ED2015-69,CPM2015-104,LQE2015-101 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.5-9(ED), pp.5-9(CPM), pp.5-9(LQE), |
| #Pages | 5 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |