| Presentation | 2015-11-26 AlN growth on AlN/Sapphire substrate by RF-HVPE Daiki Yasui, Hideto Miyake, Kazumasa Hiramatsu, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlN (Aluminum nitride) is promising for deep ultraviolet optoelectronic devices. High crystal quality free-standing AlN substrates are obtained in recent year by PVT (physical vapor transport). Nevertheless, it is difficult to fabricate low cost of AlN substrates with large diameter by PVT. Large diameter with reasonable price for commercial of AlN templates can achieve by using sapphire substrates. However, high density of threading dislocations exists in AlN templates and will lower the performance of devices. In this research, we focus on sputtering growth method, which can easily fabricate AlN films on sapphire substrate as templates, and high crystal quality of AlN films are obtained to grow AlN on sputtering AlN templates by HVPE (hydride vapor phase epitaxy). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HVPE / AlN / AlN/Sapphire / Sputtering |
| Paper # | ED2015-70,CPM2015-105,LQE2015-102 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlN growth on AlN/Sapphire substrate by RF-HVPE |
| Sub Title (in English) | |
| Keyword(1) | HVPE |
| Keyword(2) | AlN |
| Keyword(3) | AlN/Sapphire |
| Keyword(4) | Sputtering |
| 1st Author's Name | Daiki Yasui |
| 1st Author's Affiliation | Mie University(Mie Univ.) |
| 2nd Author's Name | Hideto Miyake |
| 2nd Author's Affiliation | Mie University(Mie Univ.) |
| 3rd Author's Name | Kazumasa Hiramatsu |
| 3rd Author's Affiliation | Mie University(Mie Univ.) |
| 4th Author's Name | Motoaki Iwaya |
| 4th Author's Affiliation | Meijo University(Meijo Univ.) |
| 5th Author's Name | Isamu Akasaki |
| 5th Author's Affiliation | Meijo University(Meijo Univ.) |
| 6th Author's Name | Hiroshi Amano |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2015-11-26 |
| Paper # | ED2015-70,CPM2015-105,LQE2015-102 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.11-14(ED), pp.11-14(CPM), pp.11-14(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |