| Presentation | 2015-11-26 Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it is difficult to measure pure Raman spectra from light emitters because Raman signals may overlap with luminescence. In this report, we propose “Multi-wavelength excited Raman scattering spectroscopy”, where Raman spectra acquired with slightly different excitation wavelengths are subtracted each other. This method can eliminate luminescence components from the experimentally obtained Raman spectra. We successfully obtain InGaN Raman signals with this method and visualize the spatial distribution of In composition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Indium gallium nitride / Raman scattering |
| Paper # | ED2015-79,CPM2015-114,LQE2015-111 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers |
| Sub Title (in English) | |
| Keyword(1) | Indium gallium nitride |
| Keyword(2) | Raman scattering |
| 1st Author's Name | Ryosuke Ishido |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Ryota Ishii |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Mitsuru Funato |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 4th Author's Name | Yoichi Kawakami |
| 4th Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2015-11-26 |
| Paper # | ED2015-79,CPM2015-114,LQE2015-111 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.59-62(ED), pp.59-62(CPM), pp.59-62(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |