Presentation 2015-11-26
A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is presented. Turn-on voltages in the GaN THD and GaN Schottky barrier diode (SBD) are 0.8 V. A current density in the GaN THD of 9.0 kA / cm2 at 10 V is almost twice as that in the GaN SBD of 4.4 kA / cm2 10 V. A breakdown voltage of the GaN THD is 1.6 kV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Gallium Nitride / Schottky barrier diode / PN junction diode / JBS (Junction barrier Schottky) Diode / MPS (Merged PiN Schottky) Diode
Paper # ED2015-75,CPM2015-110,LQE2015-107
Date of Issue 2015-11-19 (ED, CPM, LQE)

Conference Information
Committee ED / LQE / CPM
Conference Date 2015/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka City University Media Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.)
Secretary Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
Sub Title (in English)
Keyword(1) Gallium Nitride
Keyword(2) Schottky barrier diode
Keyword(3) PN junction diode
Keyword(4) JBS (Junction barrier Schottky) Diode
Keyword(5) MPS (Merged PiN Schottky) Diode
1st Author's Name Ryo Kajitani
1st Author's Affiliation Panasonic Corp.(Panasonic)
2nd Author's Name Hiroyuki Handa
2nd Author's Affiliation Panasonic Corp.(Panasonic)
3rd Author's Name Shinji Ujita
3rd Author's Affiliation Panasonic Corp.(Panasonic)
4th Author's Name Daisuke Shibata
4th Author's Affiliation Panasonic Corp.(Panasonic)
5th Author's Name Masahiro Ogawa
5th Author's Affiliation Panasonic Corp.(Panasonic)
6th Author's Name Kenichiro Tanaka
6th Author's Affiliation Panasonic Corp.(Panasonic)
7th Author's Name Hidetoshi Ishida
7th Author's Affiliation Panasonic Corp.(Panasonic)
8th Author's Name Satoshi Tamura
8th Author's Affiliation Panasonic Corp.(Panasonic)
9th Author's Name Masahiro Ishida
9th Author's Affiliation Panasonic Corp.(Panasonic)
10th Author's Name Tetsuzo Ueda
10th Author's Affiliation Panasonic Corp.(Panasonic)
Date 2015-11-26
Paper # ED2015-75,CPM2015-110,LQE2015-107
Volume (vol) vol.115
Number (no) ED-329,CPM-330,LQE-331
Page pp.pp.39-42(ED), pp.39-42(CPM), pp.39-42(LQE),
#Pages 4
Date of Issue 2015-11-19 (ED, CPM, LQE)