Presentation | 2015-11-26 A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is presented. Turn-on voltages in the GaN THD and GaN Schottky barrier diode (SBD) are 0.8 V. A current density in the GaN THD of 9.0 kA / cm2 at 10 V is almost twice as that in the GaN SBD of 4.4 kA / cm2 10 V. A breakdown voltage of the GaN THD is 1.6 kV. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Gallium Nitride / Schottky barrier diode / PN junction diode / JBS (Junction barrier Schottky) Diode / MPS (Merged PiN Schottky) Diode |
Paper # | ED2015-75,CPM2015-110,LQE2015-107 |
Date of Issue | 2015-11-19 (ED, CPM, LQE) |
Conference Information | |
Committee | ED / LQE / CPM |
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Conference Date | 2015/11/26(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Osaka City University Media Center |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) |
Sub Title (in English) | |
Keyword(1) | Gallium Nitride |
Keyword(2) | Schottky barrier diode |
Keyword(3) | PN junction diode |
Keyword(4) | JBS (Junction barrier Schottky) Diode |
Keyword(5) | MPS (Merged PiN Schottky) Diode |
1st Author's Name | Ryo Kajitani |
1st Author's Affiliation | Panasonic Corp.(Panasonic) |
2nd Author's Name | Hiroyuki Handa |
2nd Author's Affiliation | Panasonic Corp.(Panasonic) |
3rd Author's Name | Shinji Ujita |
3rd Author's Affiliation | Panasonic Corp.(Panasonic) |
4th Author's Name | Daisuke Shibata |
4th Author's Affiliation | Panasonic Corp.(Panasonic) |
5th Author's Name | Masahiro Ogawa |
5th Author's Affiliation | Panasonic Corp.(Panasonic) |
6th Author's Name | Kenichiro Tanaka |
6th Author's Affiliation | Panasonic Corp.(Panasonic) |
7th Author's Name | Hidetoshi Ishida |
7th Author's Affiliation | Panasonic Corp.(Panasonic) |
8th Author's Name | Satoshi Tamura |
8th Author's Affiliation | Panasonic Corp.(Panasonic) |
9th Author's Name | Masahiro Ishida |
9th Author's Affiliation | Panasonic Corp.(Panasonic) |
10th Author's Name | Tetsuzo Ueda |
10th Author's Affiliation | Panasonic Corp.(Panasonic) |
Date | 2015-11-26 |
Paper # | ED2015-75,CPM2015-110,LQE2015-107 |
Volume (vol) | vol.115 |
Number (no) | ED-329,CPM-330,LQE-331 |
Page | pp.pp.39-42(ED), pp.39-42(CPM), pp.39-42(LQE), |
#Pages | 4 |
Date of Issue | 2015-11-19 (ED, CPM, LQE) |