| Presentation | 2015-11-27 Improved Properties in InGaN-based Solar Cells by surface passivation process. Kabata, Tsutsumi Tatsuya, Miyoshi Makoto, Egawa Takashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InGaN alloys are now viewed as promising material for solar cell applications due to their direct and variable band gaps ranging from 0.64 eV for InN to 3.4 eV for GaN, which allow them to cover a large part of solar spectrum. In this study, we attempted to apply the surface passivation technique to InGaN-based solar cells for improving their conversion efficiency. Samples with the surface patterns of a sputtered SiO2 film or an atomic-layer-deposited (ALD) Al2O3 film were examined in addition to a sample with a transparent NiAu surface pattern. As a result, the sample with an ALD-Al2O3 film showed a high external quantum efficiency and a twofold higher energy conversion efficiency (from 0.5% to 1.3%) than those of the other samples. Current-voltage characteristics indicated that the ALD-Al2O3 film suppressed the reduction of shunt resistance in solar cell devices. Also, the measurement results of spectral reflectivity and time-resolved photoluminescence indicated that the ALD-Al2O3 film suppressed the surface reflection and the surface carrier recombination. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN / Solar cell / MQW / Al2 O3 / Passivation |
| Paper # | ED2015-87,CPM2015-122,LQE2015-119 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved Properties in InGaN-based Solar Cells by surface passivation process. |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | Solar cell |
| Keyword(3) | MQW |
| Keyword(4) | Al2 O3 |
| Keyword(5) | Passivation |
| 1st Author's Name | Kabata |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst of Tech) |
| 2nd Author's Name | Tsutsumi Tatsuya |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst of Tech) |
| 3rd Author's Name | Miyoshi Makoto |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst of Tech) |
| 4th Author's Name | Egawa Takashi |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst of Tech) |
| Date | 2015-11-27 |
| Paper # | ED2015-87,CPM2015-122,LQE2015-119 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.95-99(ED), pp.95-99(CPM), pp.95-99(LQE), |
| #Pages | 5 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |