Presentation 2015-11-27
High-temperature growth of a-AlGaN/AlN and its optical properties
Masafumi Jo, Hideki Hirayama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # ED2015-85,CPM2015-120,LQE2015-117
Date of Issue 2015-11-19 (ED, CPM, LQE)

Conference Information
Committee ED / LQE / CPM
Conference Date 2015/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Osaka City University Media Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies
Chair Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.)
Vice Chair Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.)
Secretary Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-temperature growth of a-AlGaN/AlN and its optical properties
Sub Title (in English)
Keyword(1)
1st Author's Name Masafumi Jo
1st Author's Affiliation RIKEN(RIKEN)
2nd Author's Name Hideki Hirayama
2nd Author's Affiliation RIKEN(RIKEN)
Date 2015-11-27
Paper # ED2015-85,CPM2015-120,LQE2015-117
Volume (vol) vol.115
Number (no) ED-329,CPM-330,LQE-331
Page pp.pp.85-88(ED), pp.85-88(CPM), pp.85-88(LQE),
#Pages 4
Date of Issue 2015-11-19 (ED, CPM, LQE)