| Presentation | 2015-11-26 Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements Kohei Kawakami, Takashi Nakano, Atsushi A Yamaguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Radiative and non-radiative recombination lifetimes in III-nitride semiconductors are usually estimated from time-resolved and temperature-dependent photoluminescence (PL) measurements by assuming that internal quantum efficiency (IQE) at cryogenic temperature is unity. In our recent study, we found that the assumption is not necessarily valid, from simultaneous measurements of PL and photo-acoustic (PA) signals. In this study, we estimate accurate lifetimes from the reliable IQE values estimated by the simultaneous PL/PA measurements, and it is found that radiative lifetime in GaN increases in proportion to the 1.5th power of temperature and that non-radiative lifetime shows little temperature dependence although the non-radiative lifetime itself largely depends on sample quality. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride Semiconductor / GaN / IQE / Recombination lifetime |
| Paper # | ED2015-77,CPM2015-112,LQE2015-109 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of radiative and non-radiative lifetimes in GaN using accurate internal-quantum-efficiency values estimated by simultaneous photoluminescence and photo-acoustic measurements |
| Sub Title (in English) | |
| Keyword(1) | Nitride Semiconductor |
| Keyword(2) | GaN |
| Keyword(3) | IQE |
| Keyword(4) | Recombination lifetime |
| 1st Author's Name | Kohei Kawakami |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Takashi Nakano |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Atsushi A Yamaguchi |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| Date | 2015-11-26 |
| Paper # | ED2015-77,CPM2015-112,LQE2015-109 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.49-52(ED), pp.49-52(CPM), pp.49-52(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |