| Presentation | 2015-11-27 Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition Gosuke Nishino, Toshiharu Kubo, Takashi Egawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We previously reported that MIS-HEMTs with Al2O3 fabricated by ALD using both H2O and O3 as oxygen precursors showed good current-voltage(I-V) characteristics. In this paper HfO2 was focused as an insulator in AlGaN/GaN MIS structure. HfO2 was deposited by ALD using both H2O and O3 as oxygen precursors, and I-V characteristics and interface states of MIS-HEMTs were evaluated. We also evaluated X-ray photoelectron spectroscopy (XPS) spectrum of HfO2/AlGaN interfaces. Dielectric constant of the HfO2 was about 24. Large suppression of gate leakage current was obtained by using HfO2 as the gate insulator. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MIS / ALD / insulator / HfO2 |
| Paper # | ED2015-82,CPM2015-117,LQE2015-114 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MIS |
| Keyword(3) | ALD |
| Keyword(4) | insulator |
| Keyword(5) | HfO2 |
| 1st Author's Name | Gosuke Nishino |
| 1st Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 2nd Author's Name | Toshiharu Kubo |
| 2nd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| 3rd Author's Name | Takashi Egawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology(NITech) |
| Date | 2015-11-27 |
| Paper # | ED2015-82,CPM2015-117,LQE2015-114 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.73-76(ED), pp.73-76(CPM), pp.73-76(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |