| Presentation | 2015-11-26 Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity by assuming that the IQE at cryogenic temperature is unity. III-nitride samples, however, usually have large defect-density, and the assumption is not necessarily valid. In this study, we developed a new method to estimate accurate IQE values by simultaneous PL and photo-acoustic (PA) measurements, and demonstratively evaluated the IQE values for various GaN samples. The results show that the conventional method cannot give accurate IQE values for low-quality samples although it can be valid for high-quality samples, and that our method can always give accurate values. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Photo-acoustic / Internal quantum efficiency / temperature dependence of photoluminescence intensity / Non-radiative recombination |
| Paper # | ED2015-78,CPM2015-113,LQE2015-110 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | ED / LQE / CPM |
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| Conference Date | 2015/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka City University Media Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Chair | Koichi Maezawa(Univ. of Toyama) / Hajime Shoji(Sumitomo Electric Industries) / Satoru Noge(Numazu National College of Tech.) |
| Vice Chair | Kunio Tsuda(Toshiba) / Susumu Noda(Kyoto Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Secretary | Kunio Tsuda(NEC) / Susumu Noda(JAIST) / Fumihiko Hirose(NICT) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) / / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Photo-acoustic |
| Keyword(3) | Internal quantum efficiency |
| Keyword(4) | temperature dependence of photoluminescence intensity |
| Keyword(5) | Non-radiative recombination |
| 1st Author's Name | Takashi Nakano |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Kouhei Kawakami |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Atsushi A. Yamaguchi |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| Date | 2015-11-26 |
| Paper # | ED2015-78,CPM2015-113,LQE2015-110 |
| Volume (vol) | vol.115 |
| Number (no) | ED-329,CPM-330,LQE-331 |
| Page | pp.pp.53-58(ED), pp.53-58(CPM), pp.53-58(LQE), |
| #Pages | 6 |
| Date of Issue | 2015-11-19 (ED, CPM, LQE) |