Presentation	2015-10-30 [Special Talk] Radiation Hardness of Wide Bandgap Semiconductors Mitsuaki Yano,
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Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	Space radiation environments provide the cumulative degradation by total-dose effects and displacement damage effects as well as the soft-errors by single-event effects. In this presentation, our experimental results are reported focusing on the displacement damage effects for wide bandgap semiconductors of GaN and ZnO.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Semiconductor / Radiation Hardness / Displacement Damage / Degradation Analysis
Paper #	SANE2015-43
Date of Issue	2015-10-23 (SANE)

Conference Information
Committee	SANE
Conference Date	2015/10/30(1days)
Place (in Japanese)	(See Japanese page)
Place (in English)	OIT UMEKITA Knowledge Center
Topics (in Japanese)	(See Japanese page)
Topics (in English)	Radar signal processing and general issues
Chair	Hirokazu Kobayashi(Osaka Inst. of Tech.)
Vice Chair	Masanobu Tsuji(JAXA) / Takahide Mizuno(JAXA)
Secretary	Masanobu Tsuji(Univ. of Electro-Comm.) / Takahide Mizuno(JAXA)
Assistant	Yasushi Obata(Mitsubishi Electric) / Atsushi Kezuka(ENRI)

Paper Information
Registration To	Technical Committee on Space, Aeronautical and Navigational Electronics
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	[Special Talk] Radiation Hardness of Wide Bandgap Semiconductors
Sub Title (in English)
Keyword(1)	Semiconductor
Keyword(2)	Radiation Hardness
Keyword(3)	Displacement Damage
Keyword(4)	Degradation Analysis
1st Author's Name	Mitsuaki Yano
1st Author's Affiliation	Osaka Institute of Technology(OIT)
Date	2015-10-30
Paper #	SANE2015-43
Volume (vol)	vol.115
Number (no)	SANE-282
Page	pp.pp.13-14(SANE),
#Pages	2
Date of Issue	2015-10-23 (SANE)