| Presentation | 2015-08-27 Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator Haruka Yamazaki, Yasuaki Ishikawa, Mami Fujii, Juan Paolo Bermundo, Eiji Takahashi, Yasunori Andoh, Yukiharu Uraoka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Considerable attention has been paid to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) as peripheral circuits for displays. However, achieving highly reliable a-IGZO TFTs continues to be a serious challenge. We propose a-IGZO TFTs with a fluorinated silicon nitride (SiNx:F) gate insulator (GI) which showed good reliability against positive bias temperature stress (PBTS) compared with those with thermally oxidized SiO2 GIs. From the result of X-ray photoelectron spectroscopy analysis, the fluorine in SiNx:F formed a bonding state with indium at the interface between SiNx:F and a-IGZO. Here we report a reliability-improvement mechanism using SiNx:F GIs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin-film transistor / a-IGZO / gate insulator / reliability / fluorine |
| Paper # | R2015-24,EMD2015-32,CPM2015-48,OPE2015-63,LQE2015-32 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | CPM / OPE / LQE / R / EMD |
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| Conference Date | 2015/8/27(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Aomori-Bussankan-Asupamu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Satoru Noge(Numazu National College of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Hajime Shoji(Sumitomo Electric Industries) / Hiroyasu Mawatari(NTT) / Junya Sekikawa(Shizuoka Univ.) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kensuke Ogawa(Fujikura) / Susumu Noda(Kyoto Univ.) / Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT) |
| Secretary | Fumihiko Hirose(NTT) / Kensuke Ogawa(Nihon Univ.) / Susumu Noda(Fujitsu Labs.) / Tetsushi Yuge(NTT) / Yoshiteru Abe(NICT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Shinichi Wada(TMC system) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Optoelectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Reliability / Technical Committee on Electromechanical Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator |
| Sub Title (in English) | |
| Keyword(1) | thin-film transistor |
| Keyword(2) | a-IGZO |
| Keyword(3) | gate insulator |
| Keyword(4) | reliability |
| Keyword(5) | fluorine |
| 1st Author's Name | Haruka Yamazaki |
| 1st Author's Affiliation | Nara institute of science and technology(NAIST) |
| 2nd Author's Name | Yasuaki Ishikawa |
| 2nd Author's Affiliation | Nara institute of science and technology(NAIST) |
| 3rd Author's Name | Mami Fujii |
| 3rd Author's Affiliation | Nara institute of science and technology(NAIST) |
| 4th Author's Name | Juan Paolo Bermundo |
| 4th Author's Affiliation | Nara institute of science and technology(NAIST) |
| 5th Author's Name | Eiji Takahashi |
| 5th Author's Affiliation | Nissin Electric Co.,Ltd(Nissin Electric) |
| 6th Author's Name | Yasunori Andoh |
| 6th Author's Affiliation | Nissin Electric Co.,Ltd(Nissin Electric) |
| 7th Author's Name | Yukiharu Uraoka |
| 7th Author's Affiliation | Nara institute of science and technology(NAIST) |
| Date | 2015-08-27 |
| Paper # | R2015-24,EMD2015-32,CPM2015-48,OPE2015-63,LQE2015-32 |
| Volume (vol) | vol.115 |
| Number (no) | R-194,EMD-195,CPM-196,OPE-197,LQE-198 |
| Page | pp.pp.9-11(R), pp.9-11(EMD), pp.9-11(CPM), pp.9-11(OPE), pp.9-11(LQE), |
| #Pages | 3 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |