Presentation | 2015-08-27 Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric Hiromi Okada, Mami Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Yukiharu Uraoka, Shimpei Ono, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field-effect mobility (μFE) in spite of low-temperature fabrication process. These characteristics are suitable for application of flexible display. To achieve high performance and good reliability, conventional TFTs needs high temperature process. In this study, we demonstrate IGZO-TFTs with Ionic liquid dielectric with low temperature process, high carrier accumulation and low operation voltage. The TFTs show significantly low operation voltage, S.S value, and moreover they are stable for long-term voltage stress. This device shows original degradation mechanism other than conventional deterioration. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Flexible display / a-InGaZnO(a-IGZO) / Thin film transistors(TFTs) / Gate dielectric / Ionic liquid / Ion gel |
Paper # | R2015-23,EMD2015-31,CPM2015-47,OPE2015-62,LQE2015-31 |
Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |
Conference Information | |
Committee | CPM / OPE / LQE / R / EMD |
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Conference Date | 2015/8/27(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Aomori-Bussankan-Asupamu |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Satoru Noge(Numazu National College of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Hajime Shoji(Sumitomo Electric Industries) / Hiroyasu Mawatari(NTT) / Junya Sekikawa(Shizuoka Univ.) |
Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kensuke Ogawa(Fujikura) / Susumu Noda(Kyoto Univ.) / Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT) |
Secretary | Fumihiko Hirose(NTT) / Kensuke Ogawa(Nihon Univ.) / Susumu Noda(Fujitsu Labs.) / Tetsushi Yuge(NTT) / Yoshiteru Abe(NICT) |
Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Shinichi Wada(TMC system) |
Paper Information | |
Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Optoelectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Reliability / Technical Committee on Electromechanical Devices |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric |
Sub Title (in English) | |
Keyword(1) | Flexible display |
Keyword(2) | a-InGaZnO(a-IGZO) |
Keyword(3) | Thin film transistors(TFTs) |
Keyword(4) | Gate dielectric |
Keyword(5) | Ionic liquid |
Keyword(6) | Ion gel |
1st Author's Name | Hiromi Okada |
1st Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
2nd Author's Name | Mami Fujii |
2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
3rd Author's Name | Yasuaki Ishikawa |
3rd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
4th Author's Name | Kazumoto Miwa |
4th Author's Affiliation | Central Research Institute of Electric Power Industry(CRIEPI) |
5th Author's Name | Yukiharu Uraoka |
5th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
6th Author's Name | Shimpei Ono |
6th Author's Affiliation | Central Research Institute of Electric Power Industry(CRIEPI) |
Date | 2015-08-27 |
Paper # | R2015-23,EMD2015-31,CPM2015-47,OPE2015-62,LQE2015-31 |
Volume (vol) | vol.115 |
Number (no) | R-194,EMD-195,CPM-196,OPE-197,LQE-198 |
Page | pp.pp.5-8(R), pp.5-8(EMD), pp.5-8(CPM), pp.5-8(OPE), pp.5-8(LQE), |
#Pages | 4 |
Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |