Presentation 2015-08-27
Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric
Hiromi Okada, Mami Fujii, Yasuaki Ishikawa, Kazumoto Miwa, Yukiharu Uraoka, Shimpei Ono,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Amorphous-InGaZnO(a-IGZO) thin-film transistors (TFTs) have good characteristics such as low leakage current, high field-effect mobility (μFE) in spite of low-temperature fabrication process. These characteristics are suitable for application of flexible display. To achieve high performance and good reliability, conventional TFTs needs high temperature process. In this study, we demonstrate IGZO-TFTs with Ionic liquid dielectric with low temperature process, high carrier accumulation and low operation voltage. The TFTs show significantly low operation voltage, S.S value, and moreover they are stable for long-term voltage stress. This device shows original degradation mechanism other than conventional deterioration.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Flexible display / a-InGaZnO(a-IGZO) / Thin film transistors(TFTs) / Gate dielectric / Ionic liquid / Ion gel
Paper # R2015-23,EMD2015-31,CPM2015-47,OPE2015-62,LQE2015-31
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE)

Conference Information
Committee CPM / OPE / LQE / R / EMD
Conference Date 2015/8/27(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Aomori-Bussankan-Asupamu
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Satoru Noge(Numazu National College of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Hajime Shoji(Sumitomo Electric Industries) / Hiroyasu Mawatari(NTT) / Junya Sekikawa(Shizuoka Univ.)
Vice Chair Fumihiko Hirose(Yamagata Univ.) / Kensuke Ogawa(Fujikura) / Susumu Noda(Kyoto Univ.) / Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT)
Secretary Fumihiko Hirose(NTT) / Kensuke Ogawa(Nihon Univ.) / Susumu Noda(Fujitsu Labs.) / Tetsushi Yuge(NTT) / Yoshiteru Abe(NICT)
Assistant Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Shinichi Wada(TMC system)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Committee on Optoelectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Reliability / Technical Committee on Electromechanical Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Elecrically Stable IGZO Thin Film Transistors using Ionic-Liquid Gate Dielectric
Sub Title (in English)
Keyword(1) Flexible display
Keyword(2) a-InGaZnO(a-IGZO)
Keyword(3) Thin film transistors(TFTs)
Keyword(4) Gate dielectric
Keyword(5) Ionic liquid
Keyword(6) Ion gel
1st Author's Name Hiromi Okada
1st Author's Affiliation Nara Institute of Science and Technology(NAIST)
2nd Author's Name Mami Fujii
2nd Author's Affiliation Nara Institute of Science and Technology(NAIST)
3rd Author's Name Yasuaki Ishikawa
3rd Author's Affiliation Nara Institute of Science and Technology(NAIST)
4th Author's Name Kazumoto Miwa
4th Author's Affiliation Central Research Institute of Electric Power Industry(CRIEPI)
5th Author's Name Yukiharu Uraoka
5th Author's Affiliation Nara Institute of Science and Technology(NAIST)
6th Author's Name Shimpei Ono
6th Author's Affiliation Central Research Institute of Electric Power Industry(CRIEPI)
Date 2015-08-27
Paper # R2015-23,EMD2015-31,CPM2015-47,OPE2015-62,LQE2015-31
Volume (vol) vol.115
Number (no) R-194,EMD-195,CPM-196,OPE-197,LQE-198
Page pp.pp.5-8(R), pp.5-8(EMD), pp.5-8(CPM), pp.5-8(OPE), pp.5-8(LQE),
#Pages 4
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE)