| Presentation | 2015-08-28 Development of broadband QD ridge-waveguide laser diode in 1.1μm Katsumi Yoshizawa, Yoshinori Sawado, Kouichi Akahane, Naokatsu Yamamoto, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To develop a new optical frequency resource for the optical communications, we focused on T-Band (1000-1260nm) and the O-Band (1260-1360nm). We are promoting the research and development of optical gain devices operating in this band. The AlGaAs cladding layers and the active layer consisting of 12 layers of InAs QDs were grown by molecular beam epitaxy. A ridge waveguide structure was formed by reactive ion etching and BCB planarization process. In 1.1μm band, fabricated LD showed the wide bandwidth of 60nm with the structure of the cleaved facet mirrors. In addition, after AR coat on the cleavage plane, ASE showed wider bandwidth that can be expected about 90nm lasing bandwidth in the external cavity. We successfully developed a high-performance gain device that operates at the new 1.1μm band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAs Quantum Dot / Quantum Dot Laser / Gain Device |
| Paper # | R2015-46,EMD2015-54,CPM2015-70,OPE2015-85,LQE2015-54 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | CPM / OPE / LQE / R / EMD |
|---|---|
| Conference Date | 2015/8/27(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Aomori-Bussankan-Asupamu |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Satoru Noge(Numazu National College of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Hajime Shoji(Sumitomo Electric Industries) / Hiroyasu Mawatari(NTT) / Junya Sekikawa(Shizuoka Univ.) |
| Vice Chair | Fumihiko Hirose(Yamagata Univ.) / Kensuke Ogawa(Fujikura) / Susumu Noda(Kyoto Univ.) / Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT) |
| Secretary | Fumihiko Hirose(NTT) / Kensuke Ogawa(Nihon Univ.) / Susumu Noda(Fujitsu Labs.) / Tetsushi Yuge(NTT) / Yoshiteru Abe(NICT) |
| Assistant | Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Shinichi Wada(TMC system) |
| Paper Information | |
| Registration To | Technical Committee on Component Parts and Materials / Technical Committee on Optoelectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Reliability / Technical Committee on Electromechanical Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of broadband QD ridge-waveguide laser diode in 1.1μm |
| Sub Title (in English) | |
| Keyword(1) | InAs Quantum Dot |
| Keyword(2) | Quantum Dot Laser |
| Keyword(3) | Gain Device |
| 1st Author's Name | Katsumi Yoshizawa |
| 1st Author's Affiliation | Pioneer Micro Technology Corporation(PioneerMTC) |
| 2nd Author's Name | Yoshinori Sawado |
| 2nd Author's Affiliation | Pioneer Micro Technology Corporation(PioneerMTC) |
| 3rd Author's Name | Kouichi Akahane |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 4th Author's Name | Naokatsu Yamamoto |
| 4th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| Date | 2015-08-28 |
| Paper # | R2015-46,EMD2015-54,CPM2015-70,OPE2015-85,LQE2015-54 |
| Volume (vol) | vol.115 |
| Number (no) | R-194,EMD-195,CPM-196,OPE-197,LQE-198 |
| Page | pp.pp.115-118(R), pp.115-118(EMD), pp.115-118(CPM), pp.115-118(OPE), pp.115-118(LQE), |
| #Pages | 4 |
| Date of Issue | 2015-08-20 (R, EMD, CPM, OPE, LQE) |