Presentation 2015-08-28
Analysis of heat dissipation and evaluation of current reduction of 1.3 μm wavelength InGaAlAs BH laser
Takahiko Shindo, Wataru Kobayashi, Yoshihiro Ogiso, Naoki Fujiwara, Ryuzo Iga, Yoshitaka Ohiso, Hiroyuki Ishii,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The 1.3 μm wavelength InGaAlAs directly modulated semiconductor laser is a promising candidate as a high-speed semiconductor light source with a low power consumption for future transmission systems beyond 100 Gbit Ethernet. In this study, the internal temperature increase induced by the injected current of a ridge laser and a buried heterostructure (BH) laser were estimated by simulating the heat distribution in the cavity and evaluating the fabricated devices. As a result, the temperature increase with the BH laser was about 5°C less than with the ridge laser. Next, the reduction in the driving current was also evaluated by comparing the fabricated ridge laser and a BH laser. The driving current of the BH laser for an optical output of 15 mW was about 11 mA less than with the ridge laser. The main reasons for the current reduction are thought to be the strong current confinement and the high heat dissipation of the BH structure. In addition, it is also revealed that the current reduction realized thanks to the heat dissipation effect of the BH laser represents about 20% of the total reduced driving current.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Directly modulated laser / InGaAlAs / Buried heterosturucture
Paper # R2015-37,EMD2015-45,CPM2015-61,OPE2015-76,LQE2015-45
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE)

Conference Information
Committee CPM / OPE / LQE / R / EMD
Conference Date 2015/8/27(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Aomori-Bussankan-Asupamu
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Satoru Noge(Numazu National College of Tech.) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) / Hajime Shoji(Sumitomo Electric Industries) / Hiroyasu Mawatari(NTT) / Junya Sekikawa(Shizuoka Univ.)
Vice Chair Fumihiko Hirose(Yamagata Univ.) / Kensuke Ogawa(Fujikura) / Susumu Noda(Kyoto Univ.) / Tetsushi Yuge(National Defense Academy) / Yoshiteru Abe(NTT)
Secretary Fumihiko Hirose(NTT) / Kensuke Ogawa(Nihon Univ.) / Susumu Noda(Fujitsu Labs.) / Tetsushi Yuge(NTT) / Yoshiteru Abe(NICT)
Assistant Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) / / Maratt Zanikef(Kyushu Inst. of Tech.) / Nobuyuki Tamura(Hosei Univ.) / Shinichi Wada(TMC system)

Paper Information
Registration To Technical Committee on Component Parts and Materials / Technical Committee on Optoelectronics / Technical Committee on Lasers and Quantum Electronics / Technical Committee on Reliability / Technical Committee on Electromechanical Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of heat dissipation and evaluation of current reduction of 1.3 μm wavelength InGaAlAs BH laser
Sub Title (in English)
Keyword(1) Directly modulated laser
Keyword(2) InGaAlAs
Keyword(3) Buried heterosturucture
1st Author's Name Takahiko Shindo
1st Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
2nd Author's Name Wataru Kobayashi
2nd Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
3rd Author's Name Yoshihiro Ogiso
3rd Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
4th Author's Name Naoki Fujiwara
4th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
5th Author's Name Ryuzo Iga
5th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
6th Author's Name Yoshitaka Ohiso
6th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
7th Author's Name Hiroyuki Ishii
7th Author's Affiliation Nippon Telegraph and Telephone Corporation(NTT)
Date 2015-08-28
Paper # R2015-37,EMD2015-45,CPM2015-61,OPE2015-76,LQE2015-45
Volume (vol) vol.115
Number (no) R-194,EMD-195,CPM-196,OPE-197,LQE-198
Page pp.pp.73-76(R), pp.73-76(EMD), pp.73-76(CPM), pp.73-76(OPE), pp.73-76(LQE),
#Pages 4
Date of Issue 2015-08-20 (R, EMD, CPM, OPE, LQE)