Presentation 2015-07-24
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # ED2015-38
Date of Issue 2015-07-17 (ED)

Conference Information
Committee ED
Conference Date 2015/7/24(2days)
Place (in Japanese) (See Japanese page)
Place (in English) IT Business Plaza Musashi 5F
Topics (in Japanese) (See Japanese page)
Topics (in English) Semiconductor Processes and Devices
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Sub Title (in English)
Keyword(1)
1st Author's Name Yuichi Minoura
1st Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
2nd Author's Name Naoya Okamoto
2nd Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
3rd Author's Name Toshihiro Ohki
3rd Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
4th Author's Name Shiro Ozaki
4th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
5th Author's Name Kozo Makiyama
5th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
6th Author's Name Yoichi Kamada
6th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
7th Author's Name Keiji Watanabe
7th Author's Affiliation Fujitsu Laboratories Ltd.(Fujitsu Labs.)
Date 2015-07-24
Paper # ED2015-38
Volume (vol) vol.115
Number (no) ED-156
Page pp.pp.9-13(ED),
#Pages 5
Date of Issue 2015-07-17 (ED)