Presentation 2015-08-04
Direct thermal-type gas sensor by P-type MgCr2O4-TiO2 ceramics
Jiro Terada, Sigeru Omatsu, Shigehiko Sasa, Mitsuaki Yano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Using an element of two layers of structure that controlled the TiO2 content of p-type semiconductor of MgCr2O4-TiO2 ceramics, As for us, thermal relaxation and high sensitivity tried becoming it and realized the gas sensor of the direct thermal-type.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ceramics / two layers / direct thermal-type
Paper # ED2015-52
Date of Issue 2015-07-27 (ED)

Conference Information
Committee ED
Conference Date 2015/8/3(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Sensor device, MEMS, etc
Chair Koichi Maezawa(Univ. of Toyama)
Vice Chair Kunio Tsuda(Toshiba)
Secretary Kunio Tsuda(NEC)
Assistant Manabu Arai(New JRC) / Masataka Higashiwaki(NICT)

Paper Information
Registration To Technical Committee on Electron Device
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Direct thermal-type gas sensor by P-type MgCr2O4-TiO2 ceramics
Sub Title (in English)
Keyword(1) Ceramics
Keyword(2) two layers
Keyword(3) direct thermal-type
1st Author's Name Jiro Terada
1st Author's Affiliation Faculty of Engineering, Osaka Inst. of Tech.(O. I. T.)
2nd Author's Name Sigeru Omatsu
2nd Author's Affiliation Faculty of Engineering, Osaka Inst. of Tech.(O. I. T.)
3rd Author's Name Shigehiko Sasa
3rd Author's Affiliation Faculty of Engineering, Osaka Inst. of Tech.(O. I. T.)
4th Author's Name Mitsuaki Yano
4th Author's Affiliation Faculty of Engineering, Osaka Inst. of Tech.(O. I. T.)
Date 2015-08-04
Paper # ED2015-52
Volume (vol) vol.115
Number (no) ED-170
Page pp.pp.41-45(ED),
#Pages 5
Date of Issue 2015-07-27 (ED)