| Presentation | 2015-07-24 Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano, Hiroto Yuki, Takashi Fuyuki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impurity concentrations. Gate oxides of MOSFETs were annealed in NO or POCl3 ambient to improve interface properties after dry thermal oxidation. Hysteresis in Id-Vgs characteristics were measured under various sweep range conditions of gate voltage, and effects of interface traps on threshold voltage shift were investigated. It is found that the NO-annealed MOSFETs showed larger hysteresis in Id-Vgs curves than POCl3-annealed MOSFETs, indicating that the electron trapping is more severe in NO-annealed MOSFETs. Decrease in channel mobility was also observed with increasing substrate impurity concentrations. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 4H-SiC / MOSFET / POCl3 anneal |
| Paper # | ED2015-41 |
| Date of Issue | 2015-07-17 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2015/7/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | IT Business Plaza Musashi 5F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Semiconductor Processes and Devices |
| Chair | Koichi Maezawa(Univ. of Toyama) |
| Vice Chair | Kunio Tsuda(Toshiba) |
| Secretary | Kunio Tsuda(NEC) |
| Assistant | Manabu Arai(New JRC) / Masataka Higashiwaki(NICT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical properties of SiC MOSFETs with various substrate impurity concentrations |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | MOSFET |
| Keyword(3) | POCl3 anneal |
| 1st Author's Name | Hiroshi Yano |
| 1st Author's Affiliation | Nara Institute of Science and Technology/University of Tsukuba(NAIST/Univ. Tsukuba) |
| 2nd Author's Name | Hiroto Yuki |
| 2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| 3rd Author's Name | Takashi Fuyuki |
| 3rd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
| Date | 2015-07-24 |
| Paper # | ED2015-41 |
| Volume (vol) | vol.115 |
| Number (no) | ED-156 |
| Page | pp.pp.25-29(ED), |
| #Pages | 5 |
| Date of Issue | 2015-07-17 (ED) |