| Presentation | 2015-06-19 Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into SiOx on the resistive switching behaviors because it is expected that NDs can trigger the formation of the conductive filament path in SiOx. AFM analysis shows that a combination of a Ge(20 nm)/Ti(3 nm) stacked layer and subsequent H2-RP exposure without external heating is effective to form the high-density Ti-NDs, where Ge layer was used as a barrier layer against oxidation of the ultrathin Ti layer. XPS analysis confirmed that the Ge layer was completely etched away by H2-RP exposure and surface oxidation of Ti-NDs proceeds during air exposure. After fabrication of Si-rich oxide (SiOx) ReRAM with the NDs, resistive switching characteristics were measured from I-V curves and compared to the results obtained from the diodes without the NDs. ON/OFF ratio in resistance was increased with embedding the NDs, which indicates that the Ti oxide formed at embedded Ti-NDs surface reduces the current levels through the SiOx. In addition, embedding of Ti NDs in SiOx was found to be effective to separate the operation voltages between SET and RESET processes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Resistive Random Access Memories (ReRAMs) / Ti Nano-dots (NDs) / Si-rich Oxide (SiOx) |
| Paper # | SDM2015-46 |
| Date of Issue | 2015-06-12 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2015/6/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides |
| Sub Title (in English) | |
| Keyword(1) | Resistive Random Access Memories (ReRAMs) |
| Keyword(2) | Ti Nano-dots (NDs) |
| Keyword(3) | Si-rich Oxide (SiOx) |
| 1st Author's Name | Yuusuke Kato |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Takashi Arai |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Katsunori Makihara |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2015-06-19 |
| Paper # | SDM2015-46 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-108 |
| Page | pp.pp.41-45(SDM), |
| #Pages | 5 |
| Date of Issue | 2015-06-12 (SDM) |