| Presentation | 2015-06-19 [Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate Takahiro Mori, Naruki Ninomiya, Noriyuki Uchida, Toshitaka Kubo, Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama, Masatoshi Tanaka, Atsushi Ando, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the device fabrication and characterization of the high-k/metal gate MoS2 MOSFETs. To investigate the scattering mechanism to be responsible for the mobility of MoS2 MOSFETs, the effective mobility has been estimated from the C-V and I-V curves. The difficulty of the estimation is on the C-V measurements because the device area is so small that fF-level capacitance measurement is required. We discuss a C-V measurement technique for such a small capacitance and clarify its problems. The estimated effective mobility curve indicated that surface roughness scattering notably affected the mobility. Furthermore, the scanning tunneling microscope image exhibited atomic scale roughness on the cleaved MoS2 surface. These results suggest that the surface roughness is responsible for the mobility in MoS2 MOSFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VLSI / MOSFET / Transition Metal Dichalcogenides / MoS2 / C-V measurements |
| Paper # | SDM2015-56 |
| Date of Issue | 2015-06-12 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2015/6/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | VBL, Nagoya Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Tatsuya Kunikiyo(Renesas) |
| Secretary | Tatsuya Kunikiyo(Tohoku Univ.) |
| Assistant | Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Lecture] Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate |
| Sub Title (in English) | |
| Keyword(1) | VLSI |
| Keyword(2) | MOSFET |
| Keyword(3) | Transition Metal Dichalcogenides |
| Keyword(4) | MoS2 |
| Keyword(5) | C-V measurements |
| 1st Author's Name | Takahiro Mori |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Naruki Ninomiya |
| 2nd Author's Affiliation | Yokohama National University(YNU) |
| 3rd Author's Name | Noriyuki Uchida |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Toshitaka Kubo |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Eiichiro Watanabe |
| 5th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 6th Author's Name | Daiju Tsuya |
| 6th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 7th Author's Name | Satoshi Moriyama |
| 7th Author's Affiliation | National Institute for Materials Science(NIMS) |
| 8th Author's Name | Masatoshi Tanaka |
| 8th Author's Affiliation | Yokohama National University(YNU) |
| 9th Author's Name | Atsushi Ando |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2015-06-19 |
| Paper # | SDM2015-56 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-108 |
| Page | pp.pp.99-103(SDM), |
| #Pages | 5 |
| Date of Issue | 2015-06-12 (SDM) |