Presentation 2015-06-19
Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi, Koichiro Oishi, Hironori Katagiri, Yasuhiro Tamayama, Kanji Yasui,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effect of N2O-doped seed layer inserted between the ZnO film and glass substrate was investigated. Dimethylzinc (DMZ) and high energy H2O generated by a catalytic reaction were used as zinc and oxygen sources, respectively. Electron mobility of the ZnO films increased by an appropriate N2O-doped seed layer and the maximum mobility of 30.1 cm2/Vs was obtained by the seed layer for 15 s. Optical transmittance in the visible wavelength region of 400-700 nm was also improved by the insertion of the N2O-doped seed layer. Parameter E0 indicating the fluctuation of the sub-bandgap energy of the films was evaluated from optical absorption coefficients at subband gap energy. The E0 decreased by the insertion of the N2O-doped seed layer and was correlated with the electron mobility of the ZnO films.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ZnO / catalytic reaction / high-energy H2O / electron mobility / band edge fluctuation
Paper # EMD2015-15,CPM2015-25,OME2015-28
Date of Issue 2015-06-12 (EMD, CPM, OME)

Conference Information
Committee EMD / CPM / OME
Conference Date 2015/6/19(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Junya Sekikawa(Shizuoka Univ.) / Satoru Noge(Numazu National College of Tech.) / Naoki Matsuda(AIST)
Vice Chair Yoshiteru Abe(NTT) / Fumihiko Hirose(Yamagata Univ.) / Tatsuo Mori(Aichi Inst. of Tech.)
Secretary Yoshiteru Abe(Sumitomo Denso) / Fumihiko Hirose(Fujielectric) / Tatsuo Mori(NTT)
Assistant Shinichi Wada(TMC system) / Takashi Sakamoto(NTT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hirotake Kajii(Osaka Univ.) / Dai Taguchi(Tokyo Inst. of Tech.)

Paper Information
Registration To Technical Committee on Electromechanical Devices / Technical Committee on Component Parts and Materials / Technical Committee on Organic Molecular Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) catalytic reaction
Keyword(3) high-energy H2O
Keyword(4) electron mobility
Keyword(5) band edge fluctuation
1st Author's Name Shingo Kanouchi
1st Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. technol.)
2nd Author's Name Yuki Ishizuka
2nd Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. technol.)
3rd Author's Name Yuki Ohashi
3rd Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. technol.)
4th Author's Name Koichiro Oishi
4th Author's Affiliation Nagaoka National College of Technology(Nagaoka Nat. Coll. Technol.)
5th Author's Name Hironori Katagiri
5th Author's Affiliation Nagaoka National College of Technology(Nagaoka Nat. Coll. Technol.)
6th Author's Name Yasuhiro Tamayama
6th Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. technol.)
7th Author's Name Kanji Yasui
7th Author's Affiliation Nagaoka University of Technology(Nagaoka Univ. technol.)
Date 2015-06-19
Paper # EMD2015-15,CPM2015-25,OME2015-28
Volume (vol) vol.115
Number (no) EMD-103,CPM-104,OME-105
Page pp.pp.23-27(EMD), pp.23-27(CPM), pp.23-27(OME),
#Pages 5
Date of Issue 2015-06-12 (EMD, CPM, OME)