| Presentation | 2015-06-19 Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and integration of InP-based active devices on the bonded substrates has demonstrated using MOVPE. In the experiment, we have employed selective MOVPE growth technique, thereby observed successful EL wavelength shift from the integrated devices. Furthermore, integration of LD structure has also been demonstrated on InP/Si substrate. These results are of importance in terms of integration of several functional III-V optical devices on heterogeneous substrate including Si substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon photonics / Wafer direct bonding / MOVPE / III-V compound |
| Paper # | OPE2015-13,LQE2015-23 |
| Date of Issue | 2015-06-12 (OPE, LQE) |
| Conference Information | |
| Committee | LQE / OPE |
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| Conference Date | 2015/6/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hajime Shoji(Sumitomo Electric Industries) / Hiroyuki Uenohara(Tokyo Inst. of Tech.) |
| Vice Chair | Susumu Noda(Kyoto Univ.) / Kensuke Ogawa(Fujikura) |
| Secretary | Susumu Noda(NICT) / Kensuke Ogawa(NTT) |
| Assistant | / Takaaki Ishigure(Keio Univ.) / Eiji Yagyu(Mitsubishi Electric) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Optoelectronics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform |
| Sub Title (in English) | |
| Keyword(1) | Silicon photonics |
| Keyword(2) | Wafer direct bonding |
| Keyword(3) | MOVPE |
| Keyword(4) | III-V compound |
| 1st Author's Name | Keiichi Matsumoto |
| 1st Author's Affiliation | Sophia University(Sophia Univ.) |
| 2nd Author's Name | Yoshinori Kanaya |
| 2nd Author's Affiliation | Sophia University(Sophia Univ.) |
| 3rd Author's Name | Junya Kishikawa |
| 3rd Author's Affiliation | Sophia University(Sophia Univ.) |
| 4th Author's Name | Kazuhiko Shimomura |
| 4th Author's Affiliation | Sophia University(Sophia Univ.) |
| Date | 2015-06-19 |
| Paper # | OPE2015-13,LQE2015-23 |
| Volume (vol) | vol.115 |
| Number (no) | OPE-106,LQE-107 |
| Page | pp.pp.15-20(OPE), pp.15-20(LQE), |
| #Pages | 6 |
| Date of Issue | 2015-06-12 (OPE, LQE) |