| Presentation | 2015-05-28 Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi, Yutaro Yamaguchi, Koji Yamanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we analyzed a physical mechanism for the forward characteristics at the high voltage by using a floating electrode measurement and a device simulation. The current slope in the current-voltage curves decreased at high voltage larger than 3.5 V. From measurement of the voltage by the floating electrodes, a parasitic resistance of the GaN epitaxial layer at the anode side was found to increase at the voltage larger than 3.5 V. By device simulation, the anode parasitic resistance was found to increase due to degradation for the electron velocity at the high electric field. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Schottky barrier diode / floating electrode / forward characteristics |
| Paper # | ED2015-23,CPM2015-8,SDM2015-25 |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) |
| Conference Information | |
| Committee | ED / CPM / SDM |
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| Conference Date | 2015/5/28(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Venture Business Laboratory, Toyohashi University of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | crystal growth、devices characterization , etc. |
| Chair | Naoki Hara(Fujitsu Labs.) / Yasushi Takano(Shizuoka Univ.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Koichi Maezawa(Univ. of Toyama) / Satoru Noge(Numazu National College of Tech.) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Koichi Maezawa(Hokkaido Univ.) / Satoru Noge(NEC) / Tatsuya Kunikiyo(Kanagawa Univ.) |
| Assistant | Toshikazu Suzuki(JAIST) / Manabu Arai(New JRC) / Nobuyuki Iwata(Nihon Univ.) / Takashi Sakamoto(NTT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device / Technical Committee on Component Parts and Materials / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Schottky barrier diode |
| Keyword(3) | floating electrode |
| Keyword(4) | forward characteristics |
| 1st Author's Name | Syuzo Yamaguchi |
| 1st Author's Affiliation | Saga University(Saga Univ.) |
| 2nd Author's Name | Toshiyuki Oishi |
| 2nd Author's Affiliation | Saga University(Saga Univ.) |
| 3rd Author's Name | Yutaro Yamaguchi |
| 3rd Author's Affiliation | Mitsubishi Electric Corpration(Mitsubishi Electric Corp.) |
| 4th Author's Name | Koji Yamanaka |
| 4th Author's Affiliation | Mitsubishi Electric Corpration(Mitsubishi Electric Corp.) |
| Date | 2015-05-28 |
| Paper # | ED2015-23,CPM2015-8,SDM2015-25 |
| Volume (vol) | vol.115 |
| Number (no) | ED-63,CPM-64,SDM-65 |
| Page | pp.pp.35-39(ED), pp.35-39(CPM), pp.35-39(SDM), |
| #Pages | 5 |
| Date of Issue | 2015-05-21 (ED, CPM, SDM) |