| Presentation | 2015-04-17 [Invited Talk] A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto, Masahiro Fujita, Jun Koyama, Shunpei Yamazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) FET. Data are written by a Vt cancel write method. In a 32768-cell memory, the 3σ distribution width of the read voltage is 47mV, and 16 nonoverlapping distributions are obtained. In a 4bit A/D whose offset-compensating voltage is controlled by a CAAC-IGZO FET, the output phase duration is 10s and the transition point voltage varies by 4mV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Crystalline Oxide Semiconductor / CAAC-IGZO / CMOS / 4bit/cell / In-Ga-Zn oxide / nonvolatile / RAM / FET |
| Paper # | ICD2015-9 |
| Date of Issue | 2015-04-09 (ICD) |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2015/4/16(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Takeshi Yamamura(Fujitsu Labs.) |
| Vice Chair | Minoru Fujishima(Hiroshima Univ.) |
| Secretary | Minoru Fujishima(Toshiba) |
| Assistant | Takeshi Yoshida(Hiroshima Univ.) / Makoto Takamiya(Univ. of Tokyo) / Akira Tsuchiya(Kyoto Univ.) / Pham Konkuha(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method |
| Sub Title (in English) | |
| Keyword(1) | Crystalline Oxide Semiconductor |
| Keyword(2) | CAAC-IGZO |
| Keyword(3) | CMOS |
| Keyword(4) | 4bit/cell |
| Keyword(5) | In-Ga-Zn oxide |
| Keyword(6) | nonvolatile |
| Keyword(7) | RAM |
| Keyword(8) | FET |
| 1st Author's Name | Takanori Matsuzaki |
| 1st Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 2nd Author's Name | Tatsuya Onuki |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 3rd Author's Name | Shuhei Nagatsuka |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 4th Author's Name | Hiroki Inoue |
| 4th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 5th Author's Name | Takahiko Ishizu |
| 5th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 6th Author's Name | Yoshinori Ieda |
| 6th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 7th Author's Name | Masayuki Sakakura |
| 7th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 8th Author's Name | Tomoaki Atsumi |
| 8th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 9th Author's Name | Yutaka Shionoiri |
| 9th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 10th Author's Name | Kiyoshi Kato |
| 10th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 11th Author's Name | Takashi Okuda |
| 11th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 12th Author's Name | Yoshitaka Yamamoto |
| 12th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 13th Author's Name | Masahiro Fujita |
| 13th Author's Affiliation | The University of Tokyo(The Univ. of Tokyo) |
| 14th Author's Name | Jun Koyama |
| 14th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| 15th Author's Name | Shunpei Yamazaki |
| 15th Author's Affiliation | Semiconductor Energy Laboratory CO.,LTD.(SEL) |
| Date | 2015-04-17 |
| Paper # | ICD2015-9 |
| Volume (vol) | vol.115 |
| Number (no) | ICD-6 |
| Page | pp.pp.39-44(ICD), |
| #Pages | 6 |
| Date of Issue | 2015-04-09 (ICD) |