Presentation 2015-05-21
Room-temperature continuous-wave operation of current-injection-type semiconductor membrane distributed-reflector laser
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Yuki Atsuji, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Recent LSI has improved the performance according to the scaling law, while some problems such as signal delay and Joule heating have occurred in the global wire. As one of attractive methods to solve these problems, an introduction of optical interconnects into the LSI has been proposed. For this purpose, we have proposed III-V semiconductor membrane lasers for low power consumption and high efficiency operation, and demonstrated low threshold operation by adopting a lateral-current-injection (LCI) structure. Theoretical investigations of their capabilities of low power consumption and high-speed modulation were also done. This time, we realized semiconductor membrane distributed reflector (DR) laser with low power consumption and high efficiency operation. For the membrane DR laser with the DFB section length of 30 $mu$m and the DBR section length of 90 $mu$m, the threshold current of 250 $mu$A, the external quantum efficiency at front side of 11%, which was 2.6 times of that of a membrane DFB laser, and the output power ratio from the front to the rear side of 6.7 were obtained. On the other hand, for a $lambda$/4-phase shifted membrane DR laser with the DFB section length of 80 $mu$m and the DBR section length of 200 $mu$m, the threshold current of 250 $mu$A (threshold current density of 90 A/$cm^2$/well) and the external quantum efficiency at front side of 8% were also obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) semiconductor laser / membrane laser / distributed reflector laser / surface grating / strong optical confinement
Paper # LQE2015-1
Date of Issue 2015-05-14 (LQE)

Conference Information
Committee LQE / LSJ
Conference Date 2015/5/21(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hajime Shoji(Sumitomo Electric Industries)
Vice Chair Susumu Noda(Kyoto Univ.)
Secretary Susumu Noda(NICT) / (NTT)
Assistant

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / *
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Room-temperature continuous-wave operation of current-injection-type semiconductor membrane distributed-reflector laser
Sub Title (in English)
Keyword(1) semiconductor laser
Keyword(2) membrane laser
Keyword(3) distributed reflector laser
Keyword(4) surface grating
Keyword(5) strong optical confinement
1st Author's Name Takuo Hiratani
1st Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
2nd Author's Name Daisuke Inoue
2nd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
3rd Author's Name Takahiro Tomiyasu
3rd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
4th Author's Name Yuki Atsuji
4th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
5th Author's Name Kai Fukuda
5th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
6th Author's Name Tomohiro Amemiya
6th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
7th Author's Name Nobuhiko Nishiyama
7th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
8th Author's Name Shigehisa Arai
8th Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
Date 2015-05-21
Paper # LQE2015-1
Volume (vol) vol.115
Number (no) LQE-46
Page pp.pp.1-6(LQE),
#Pages 6
Date of Issue 2015-05-14 (LQE)