Presentation | 2015-05-21 Room-temperature continuous-wave operation of current-injection-type semiconductor membrane distributed-reflector laser Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Yuki Atsuji, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recent LSI has improved the performance according to the scaling law, while some problems such as signal delay and Joule heating have occurred in the global wire. As one of attractive methods to solve these problems, an introduction of optical interconnects into the LSI has been proposed. For this purpose, we have proposed III-V semiconductor membrane lasers for low power consumption and high efficiency operation, and demonstrated low threshold operation by adopting a lateral-current-injection (LCI) structure. Theoretical investigations of their capabilities of low power consumption and high-speed modulation were also done. This time, we realized semiconductor membrane distributed reflector (DR) laser with low power consumption and high efficiency operation. For the membrane DR laser with the DFB section length of 30 $mu$m and the DBR section length of 90 $mu$m, the threshold current of 250 $mu$A, the external quantum efficiency at front side of 11%, which was 2.6 times of that of a membrane DFB laser, and the output power ratio from the front to the rear side of 6.7 were obtained. On the other hand, for a $lambda$/4-phase shifted membrane DR laser with the DFB section length of 80 $mu$m and the DBR section length of 200 $mu$m, the threshold current of 250 $mu$A (threshold current density of 90 A/$cm^2$/well) and the external quantum efficiency at front side of 8% were also obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | semiconductor laser / membrane laser / distributed reflector laser / surface grating / strong optical confinement |
Paper # | LQE2015-1 |
Date of Issue | 2015-05-14 (LQE) |
Conference Information | |
Committee | LQE / LSJ |
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Conference Date | 2015/5/21(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Hajime Shoji(Sumitomo Electric Industries) |
Vice Chair | Susumu Noda(Kyoto Univ.) |
Secretary | Susumu Noda(NICT) / (NTT) |
Assistant |
Paper Information | |
Registration To | Technical Committee on Lasers and Quantum Electronics / * |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Room-temperature continuous-wave operation of current-injection-type semiconductor membrane distributed-reflector laser |
Sub Title (in English) | |
Keyword(1) | semiconductor laser |
Keyword(2) | membrane laser |
Keyword(3) | distributed reflector laser |
Keyword(4) | surface grating |
Keyword(5) | strong optical confinement |
1st Author's Name | Takuo Hiratani |
1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
2nd Author's Name | Daisuke Inoue |
2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
3rd Author's Name | Takahiro Tomiyasu |
3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
4th Author's Name | Yuki Atsuji |
4th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
5th Author's Name | Kai Fukuda |
5th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
6th Author's Name | Tomohiro Amemiya |
6th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
7th Author's Name | Nobuhiko Nishiyama |
7th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
8th Author's Name | Shigehisa Arai |
8th Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
Date | 2015-05-21 |
Paper # | LQE2015-1 |
Volume (vol) | vol.115 |
Number (no) | LQE-46 |
Page | pp.pp.1-6(LQE), |
#Pages | 6 |
Date of Issue | 2015-05-14 (LQE) |