Presentation | 2015-04-16 Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda, Tomohiro Yoshida, Tetsuya Suemitsu, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated. The PA also has matching circuits. Although InGaAs HEMTs operate in high speed, stability is worse than other transistors. So we add this PA lossless negative feedback to make this PA stable. For improving the PA’s property, we analyze which part of this PA contributes to a drop of power-added-efficiency (PAE) by dividing PA and simulating the gains of each parts. The designed PA shows PAE of 32.6% including loss of matching circuits at 60GHz. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaAs HEMT / Class-F power amplifier / Millimeter wave / PAE / Negative feedback / Stabilization |
Paper # | WPT2015-4,MW2015-4 |
Date of Issue | 2015-04-09 (WPT, MW) |
Conference Information | |
Committee | WPT / MW |
---|---|
Conference Date | 2015/4/16(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Microwave technologies for Wireless Power Transfer, Superconducting Microwave technologies, Microwave technologies, etc. |
Chair | Naoki Shinohara(Kyoto Univ.) / Futoshi Kuroki(Kure National College of Tech.) |
Vice Chair | / Masashi Nakatsugawa(NTT) / Takao Kuki(NHK-ES) / Koji Yamanaka(Mitsubishi Electric) |
Secretary | (Sendai National College of Tech.) / Masashi Nakatsugawa(Kagoshima Univ.) / Takao Kuki(NEC) / Koji Yamanaka(NTT) |
Assistant | Hiroshi Hirayama(Nagoya Inst. of Tech.) / Takashi Hikagae(Hokkaido Univ.) / Masataka Ohira(Saitama Univ.) / Ryo Ishikawa(Univ. of Electro-Comm.) |
Paper Information | |
Registration To | Technical Committee on Wireless Power Transfer / Technical Committee on Microwaves |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback |
Sub Title (in English) | |
Keyword(1) | InGaAs HEMT |
Keyword(2) | Class-F power amplifier |
Keyword(3) | Millimeter wave |
Keyword(4) | PAE |
Keyword(5) | Negative feedback |
Keyword(6) | Stabilization |
1st Author's Name | Kunihiko Watanabe |
1st Author's Affiliation | Tokyo University of Science(Tokyo Univ. of Science) |
2nd Author's Name | Yohtaro Umeda |
2nd Author's Affiliation | Tokyo University of Science(Tokyo Univ. of Science) |
3rd Author's Name | Tomohiro Yoshida |
3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
4th Author's Name | Tetsuya Suemitsu |
4th Author's Affiliation | Tohoku University(Tohoku Univ.) |
Date | 2015-04-16 |
Paper # | WPT2015-4,MW2015-4 |
Volume (vol) | vol.115 |
Number (no) | WPT-3,MW-4 |
Page | pp.pp.15-19(WPT), pp.15-19(MW), |
#Pages | 5 |
Date of Issue | 2015-04-09 (WPT, MW) |