Presentation 2015-04-16
Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback
Kunihiko Watanabe, Yohtaro Umeda, Tomohiro Yoshida, Tetsuya Suemitsu,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated. The PA also has matching circuits. Although InGaAs HEMTs operate in high speed, stability is worse than other transistors. So we add this PA lossless negative feedback to make this PA stable. For improving the PA’s property, we analyze which part of this PA contributes to a drop of power-added-efficiency (PAE) by dividing PA and simulating the gains of each parts. The designed PA shows PAE of 32.6% including loss of matching circuits at 60GHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaAs HEMT / Class-F power amplifier / Millimeter wave / PAE / Negative feedback / Stabilization
Paper # WPT2015-4,MW2015-4
Date of Issue 2015-04-09 (WPT, MW)

Conference Information
Committee WPT / MW
Conference Date 2015/4/16(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English) Microwave technologies for Wireless Power Transfer, Superconducting Microwave technologies, Microwave technologies, etc.
Chair Naoki Shinohara(Kyoto Univ.) / Futoshi Kuroki(Kure National College of Tech.)
Vice Chair / Masashi Nakatsugawa(NTT) / Takao Kuki(NHK-ES) / Koji Yamanaka(Mitsubishi Electric)
Secretary (Sendai National College of Tech.) / Masashi Nakatsugawa(Kagoshima Univ.) / Takao Kuki(NEC) / Koji Yamanaka(NTT)
Assistant Hiroshi Hirayama(Nagoya Inst. of Tech.) / Takashi Hikagae(Hokkaido Univ.) / Masataka Ohira(Saitama Univ.) / Ryo Ishikawa(Univ. of Electro-Comm.)

Paper Information
Registration To Technical Committee on Wireless Power Transfer / Technical Committee on Microwaves
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback
Sub Title (in English)
Keyword(1) InGaAs HEMT
Keyword(2) Class-F power amplifier
Keyword(3) Millimeter wave
Keyword(4) PAE
Keyword(5) Negative feedback
Keyword(6) Stabilization
1st Author's Name Kunihiko Watanabe
1st Author's Affiliation Tokyo University of Science(Tokyo Univ. of Science)
2nd Author's Name Yohtaro Umeda
2nd Author's Affiliation Tokyo University of Science(Tokyo Univ. of Science)
3rd Author's Name Tomohiro Yoshida
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Tetsuya Suemitsu
4th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2015-04-16
Paper # WPT2015-4,MW2015-4
Volume (vol) vol.115
Number (no) WPT-3,MW-4
Page pp.pp.15-19(WPT), pp.15-19(MW),
#Pages 5
Date of Issue 2015-04-09 (WPT, MW)