Presentation 2015-04-22
Optimization of the Si substrate on NbN tunnel junctions for the terahertz mixing applications
Kazumasa Makise, Hirotaka Terai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a niobium nitride superconducting mixer for terahertz band application. The NbN films are epitaxially grown with (100) direction on MgO (100) substrates, while the NbN films on Si substrate is polycrystalline. In this paper, We reported the fabrication technique of (100)-oriented NbN thin films on Si (100) wafers by DC magnetron sputtering method using TiN as a buffer layer. Moreover, the junctions consist of epitaxial NbN/AlN/NbN tunnel junctions using TiN buffer layer fabricated on single-crystal Si(100) substrates.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Tunnel Junction / Niobium nitride / SIS mixer
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Conference Information
Committee SCE
Conference Date 2015/4/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikaishinkou-kaikan
Topics (in Japanese) (See Japanese page)
Topics (in English) High frequency application, Devices, etc.
Chair Keiji Unpuku(Kyushu Univ.)
Vice Chair
Secretary (Kinki Univ.)
Assistant Hiroyuki Akaike(Nagoya Univ.)

Paper Information
Registration To Technical Committee on Superconductive Electronics
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optimization of the Si substrate on NbN tunnel junctions for the terahertz mixing applications
Sub Title (in English)
Keyword(1) Tunnel Junction
Keyword(2) Niobium nitride
Keyword(3) SIS mixer
1st Author's Name Kazumasa Makise
1st Author's Affiliation National Instruments of Infomation and communications technology(NICT)
2nd Author's Name Hirotaka Terai
2nd Author's Affiliation National Instruments of Infomation and communications technology(NICT)
Date 2015-04-22
Paper #
Volume (vol) vol.115
Number (no) SCE-13
Page pp.pp.-(),
#Pages
Date of Issue