| Presentation | 2015-04-29 Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka, Dapeng Wang, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Effets of fluorine in In-Ga-Zn-O on defect passivation and reliability improvement of thin-film transistor have been investigated. Fluorine contained silicon nitride (SiNx:F) was used as a passivation layer of the IGZO TFT. We found that reliability of the IGZO TFT dramatically improved when fluorine diffused into an IGZO channel through post-fabrication annealing. The fluorine-passivated IGZO TFT has enhanced operation temperature, and is advantageous for achieving highly reliable oxide TFTs for next-generation displays. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | In-Ga-Zn-O (IGZO) / thin-film transistor (TFT) / fluorine / defect passivation / reliability |
| Paper # | SDM2015-8,OME2015-8 |
| Date of Issue | 2015-04-22 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2015/4/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Chair | Keizo Kato(Niigata Univ.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Naoki Matsuda(Canon Electronics) / Tatsuya Kunikiyo(Aichi Inst. of Tech.) |
| Assistant | Akihiro Kohno(NTT) / Shinichiro Inoue(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of fluorine in In-Ga-Zn-O on defect passivartion and reliability of thin-film transistors |
| Sub Title (in English) | |
| Keyword(1) | In-Ga-Zn-O (IGZO) |
| Keyword(2) | thin-film transistor (TFT) |
| Keyword(3) | fluorine |
| Keyword(4) | defect passivation |
| Keyword(5) | reliability |
| 1st Author's Name | Mamoru Furuta |
| 1st Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 2nd Author's Name | Jingxin Jiang |
| 2nd Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 3rd Author's Name | Gengo Tatsuoka |
| 3rd Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| 4th Author's Name | Dapeng Wang |
| 4th Author's Affiliation | Kochi University of Technology(Kochi Univ. of Tech.) |
| Date | 2015-04-29 |
| Paper # | SDM2015-8,OME2015-8 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-18,OME-19 |
| Page | pp.pp.31-34(SDM), pp.31-34(OME), |
| #Pages | 4 |
| Date of Issue | 2015-04-22 (SDM, OME) |