| Presentation | 2015-04-30 Temperature Analysis of Si Films during Blue Multi-Laser Diode Annealing Tatsuya Okada, Seita Kamimura, Takashi Noguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films for next generation System on Panel. In this work, we performed numerical analysis of temperature distribution during BLDA. For the calculation, blue laser beam was focused on a-Si films with thickness between 50 nm to 1 µm, and the laser beam was scanned with a speed of 500 mm/s. Around 20 µs after starting laser scanning, the annealing profile reached steady state. Temperature difference between surface and bottom-surface of film was only ~30 K for 50 nm thick Si. The result indicates that nucleation occurs uniformly in the film due to the small gradient in depth direction, thus, small grains can be obtained uniformly. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Blue Multi-Laser Diode Annealing / Crystallization / Temperature Analysis |
| Paper # | SDM2015-14,OME2015-14 |
| Date of Issue | 2015-04-22 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2015/4/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Chair | Keizo Kato(Niigata Univ.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Naoki Matsuda(Canon Electronics) / Tatsuya Kunikiyo(Aichi Inst. of Tech.) |
| Assistant | Akihiro Kohno(NTT) / Shinichiro Inoue(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature Analysis of Si Films during Blue Multi-Laser Diode Annealing |
| Sub Title (in English) | |
| Keyword(1) | Blue Multi-Laser Diode Annealing |
| Keyword(2) | Crystallization |
| Keyword(3) | Temperature Analysis |
| 1st Author's Name | Tatsuya Okada |
| 1st Author's Affiliation | University of the Ryukyus(Univ. Ryukyus) |
| 2nd Author's Name | Seita Kamimura |
| 2nd Author's Affiliation | University of the Ryukyus(Univ. Ryukyus) |
| 3rd Author's Name | Takashi Noguchi |
| 3rd Author's Affiliation | University of the Ryukyus(Univ. Ryukyus) |
| Date | 2015-04-30 |
| Paper # | SDM2015-14,OME2015-14 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-18,OME-19 |
| Page | pp.pp.53-55(SDM), pp.53-55(OME), |
| #Pages | 3 |
| Date of Issue | 2015-04-22 (SDM, OME) |