| Presentation | 2015-04-30 [Invited Talk] Formation of high Sn content SiSn films and its band structure Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$_{x}$ alloys ($x: 0-0.3$) on insulators and Ge substrates. Micro-probe Raman spectra and Auger electron spectroscopy depth profiles reveal the presence of the substitutional Sn content as high as 22% in the polycrystalline- and epitaxial-Si$_{1-x}$Sn$_{x}$ layers after annealing at 220℃ for 5 hrs. In addition, the band gap shrinkage due to the Sn incorporation has been demonstrated by Fourier transform infrared spectroscopy measurements. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | group-IV semiconductor / silicon tin (SiSn) / solid phase crystallization |
| Paper # | SDM2015-9,OME2015-9 |
| Date of Issue | 2015-04-22 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2015/4/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Chair | Keizo Kato(Niigata Univ.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Naoki Matsuda(Canon Electronics) / Tatsuya Kunikiyo(Aichi Inst. of Tech.) |
| Assistant | Akihiro Kohno(NTT) / Shinichiro Inoue(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Formation of high Sn content SiSn films and its band structure |
| Sub Title (in English) | Aiming for direct-band-gap semiconductor |
| Keyword(1) | group-IV semiconductor |
| Keyword(2) | silicon tin (SiSn) |
| Keyword(3) | solid phase crystallization |
| 1st Author's Name | Masashi Kurosawa |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Wakana Takeuchi |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Mitsuo Sakashita |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Osamu Nakatsuka |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Shigeaki Zaima |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2015-04-30 |
| Paper # | SDM2015-9,OME2015-9 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-18,OME-19 |
| Page | pp.pp.35-37(SDM), pp.35-37(OME), |
| #Pages | 3 |
| Date of Issue | 2015-04-22 (SDM, OME) |