| Presentation | 2015-04-30 Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, Seiichiro Higashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The formation or random grain boundaries was successfully suppressed using grain growth control of high-speed lateral crystallization (HSLC) by micro-thermal-plasma-jet (µ-TPJ) irradiation on1 µm-wide amorphous silicon strips. This strip pattern is quite effective to improve the characteristics of thin film transistors (TFTs). The characteristic variability of TFTs with strip pattern was suppressed to 1/3 compared with conventional pattern. NMOS TFTs achieved field effect mobility of 503 ± 63 cm2V-1s-1, threshold voltage of 1.7 ± 0.06 V and S-factor of 196 ± 15 mV/dec.、152 ± 17 mV/dec. High-speed operation of CMOS circuit was demonstrated . 9-stage ring oscillator with strip pattern was oscillated by 107.5 MHz at supply voltage of 5 V. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thermal Plasma Jet / Thin Film Transistor / CMOS |
| Paper # | SDM2015-13,OME2015-13 |
| Date of Issue | 2015-04-22 (SDM, OME) |
| Conference Information | |
| Committee | OME / SDM |
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| Conference Date | 2015/4/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Oh-hama Nobumoto Memorial Hall |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology |
| Chair | Keizo Kato(Niigata Univ.) / Yuzou Oono(Univ. of Tsukuba) |
| Vice Chair | Naoki Matsuda(AIST) / Tatsuya Kunikiyo(Renesas) |
| Secretary | Naoki Matsuda(Canon Electronics) / Tatsuya Kunikiyo(Aichi Inst. of Tech.) |
| Assistant | Akihiro Kohno(NTT) / Shinichiro Inoue(NICT) / Tadashi Yamaguchi(Renesas) |
| Paper Information | |
| Registration To | Technical Committee on Organic Molecular Electronics / Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Grain Growth Control by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation on Amorphous Silicon Strips and High-Speed Operation of CMOS Circuit |
| Sub Title (in English) | |
| Keyword(1) | Thermal Plasma Jet |
| Keyword(2) | Thin Film Transistor |
| Keyword(3) | CMOS |
| 1st Author's Name | Seiji Morisaki |
| 1st Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 2nd Author's Name | Shohei Hayashi |
| 2nd Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 3rd Author's Name | Shogo Yamamoto |
| 3rd Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 4th Author's Name | Taichi Nakatani |
| 4th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| 5th Author's Name | Seiichiro Higashi |
| 5th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
| Date | 2015-04-30 |
| Paper # | SDM2015-13,OME2015-13 |
| Volume (vol) | vol.115 |
| Number (no) | SDM-18,OME-19 |
| Page | pp.pp.49-52(SDM), pp.49-52(OME), |
| #Pages | 4 |
| Date of Issue | 2015-04-22 (SDM, OME) |