| Presentation | 2015-04-17 SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized by electron-beam lithography with a bilayer resist followed by two-angle shadow evaporation. As the dimensions of tunnel junctions are miniaturized, fluctuation of lithography limits the uniformity of junctions. In this work, we propose a SiO-assisted Dolan technique as a method for improving the uniformity. We also propose an evaluation method of junction uniformity via electrical conduction properties of one-dimensional junction arrays. We experimentally demonstrate better junction uniformity of the SiO-assisted Dolan technique in comparison with those fabricated using the conventional one. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Dolan technique / tiny tunnel junctions / charging effect / shadow evaporation / electron-beam lithography |
| Paper # | ED2015-13 |
| Date of Issue | 2015-04-09 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2015/4/16(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Laboratory for Nanoelectronics and Spintronics |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Naoki Hara(Fujitsu Labs.) |
| Vice Chair | Koichi Maezawa(Univ. of Toyama) |
| Secretary | Koichi Maezawa(Hokkaido Univ.) |
| Assistant | Toshikazu Suzuki(JAIST) / Manabu Arai(New JRC) |
| Paper Information | |
| Registration To | Technical Committee on Electron Device |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity |
| Sub Title (in English) | |
| Keyword(1) | Dolan technique |
| Keyword(2) | tiny tunnel junctions |
| Keyword(3) | charging effect |
| Keyword(4) | shadow evaporation |
| Keyword(5) | electron-beam lithography |
| 1st Author's Name | Takato Tokuyama |
| 1st Author's Affiliation | The University of Electro-Communications/CREST JST(UEC Tokyo/CREST JST) |
| 2nd Author's Name | Hiroshi Shimada |
| 2nd Author's Affiliation | The University of Electro-Communications/CREST JST(UEC Tokyo/CREST JST) |
| 3rd Author's Name | Yoshinao Mizugaki |
| 3rd Author's Affiliation | The University of Electro-Communications/CREST JST(UEC Tokyo/CREST JST) |
| Date | 2015-04-17 |
| Paper # | ED2015-13 |
| Volume (vol) | vol.115 |
| Number (no) | ED-5 |
| Page | pp.pp.65-70(ED), |
| #Pages | 6 |
| Date of Issue | 2015-04-09 (ED) |