Presentation 2024-02-21
[Invited Talk] Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control
Hideaki Numata, Noriyuki Iguchi, Masamitsu Tanaka, Koichiro Okamoto, Sadahiko Miura, Ken Uchida, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A 100 nm wide superconducting Nb interconnects were fabricated by a 300-mm wafer process for low temperature SoC applications. A low pressure and long throw sputtering was adopted for the Nb deposition, resulting in good superconductivity of the 50 nm thick Nb film with a critical temperature (Tc) of 8.3 K. The interconnects had a TiN/Nb stack structure, and a double layer hard mask was used for dry etching process. The 25 nm TiN layer well protected the Nb film from plasma damage during the fabrication, then the developed 100 nm wide Nb interconnect showed good superconductivity with a Tc of 7.8 K and a critical current of 3.2 mA at 4.2 K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Superconductor / Nb / Interconnect / Dry Etching / Cryo-CMOS
Paper # SDM2023-82
Date of Issue 2024-02-14 (SDM)

Conference Information
Committee SDM
Conference Date 2024/2/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokyo University-Hongo-Engineering Bldg.4
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(Rapidus)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control
Sub Title (in English)
Keyword(1) Superconductor
Keyword(2) Nb
Keyword(3) Interconnect
Keyword(4) Dry Etching
Keyword(5) Cryo-CMOS
1st Author's Name Hideaki Numata
1st Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
2nd Author's Name Noriyuki Iguchi
2nd Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
3rd Author's Name Masamitsu Tanaka
3rd Author's Affiliation Nagoya University(Nagoya Univ.)
4th Author's Name Koichiro Okamoto
4th Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
5th Author's Name Sadahiko Miura
5th Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
6th Author's Name Ken Uchida
6th Author's Affiliation The University of Tokyo(UTokyo)
7th Author's Name Hiroki Ishikuro
7th Author's Affiliation Keio University(Keio Univ.)
8th Author's Name Toshitsugu Sakamoto
8th Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
9th Author's Name Munehiro Tada
9th Author's Affiliation NanoBridge Semiconductor, Inc.(NBS)
Date 2024-02-21
Paper # SDM2023-82
Volume (vol) vol.123
Number (no) SDM-385
Page pp.pp.4-8(SDM),
#Pages 5
Date of Issue 2024-02-14 (SDM)