| Presentation | 2024-02-29 High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs Taiki Hirase, Yuya Hirose, Tsukasa Hirai, Gaku Kato, Takamasa Kono, Naoki Sakai, Kenji Itoh, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In In this paper, the 920 MHz band low power rectifiers with low threshold voltage GaAs gated anode diodes (GADs) are demonstrated for high dynamic range operation. The GaAs GAD has an advantage of controllability on threshold voltage. This enables low threshold voltage of GaAs GAD that is similar value as a Si SBD. In the developed 920 MHz band rectifiers that are the bridge type and the 2-stage double voltage type, measured rectification efficiencies are higher than that with commercial based Si SBD. Measured sensitivities at output voltage of 0.3 V with open load are -26 dBm and -36 dBm, respectively. Furthermore, estimated maximum input powers are 11 dBm and 12 dBm, respectively. This indicates operation availability at near-field region to the transmitter. This clarifies extreme higher dynamic range of the developed GaAs rectifiers, compared with Si rectifiers in past works. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | microwave / GaAs / gated anode diode / rectifier / MMIC |
| Paper # | MW2023-179 |
| Date of Issue | 2024-02-22 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2024/2/29(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okayama Prefectural University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, etc. |
| Chair | Kensuke Okubo(Okayama Prefectural Univ.) |
| Vice Chair | Atsushi Sanada(Osaka Univ.) / Akihito Hirai(Mitsubishi Electric) |
| Secretary | Atsushi Sanada(Univ. of Electro-Comm) / Akihito Hirai(Murata Manufacturing) |
| Assistant | Tomoyuki Furuichi(Tohoku Univ.) / Kosuke Katayama(NIT Tokuyama College) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Dynamic Range 920 MHz Band Low Power Rectenna with Low Threshold voltage GaAs GADs |
| Sub Title (in English) | |
| Keyword(1) | microwave |
| Keyword(2) | GaAs |
| Keyword(3) | gated anode diode |
| Keyword(4) | rectifier |
| Keyword(5) | MMIC |
| 1st Author's Name | Taiki Hirase |
| 1st Author's Affiliation | Kanazawa Institute of Technology(Kanazawa IT.) |
| 2nd Author's Name | Yuya Hirose |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa IT.) |
| 3rd Author's Name | Tsukasa Hirai |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(Kanazawa IT.) |
| 4th Author's Name | Gaku Kato |
| 4th Author's Affiliation | Nisshinbo Micro Devices Inc.(Nisshinbo Micro Devices) |
| 5th Author's Name | Takamasa Kono |
| 5th Author's Affiliation | Nisshinbo Micro Devices Inc.(Nisshinbo Micro Devices) |
| 6th Author's Name | Naoki Sakai |
| 6th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa IT.) |
| 7th Author's Name | Kenji Itoh |
| 7th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa IT.) |
| Date | 2024-02-29 |
| Paper # | MW2023-179 |
| Volume (vol) | vol.123 |
| Number (no) | MW-396 |
| Page | pp.pp.25-30(MW), |
| #Pages | 6 |
| Date of Issue | 2024-02-22 (MW) |