Presentation | 2024-01-31 [Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping Kunifumi Suzuki, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | SDM2023-78 |
Date of Issue | 2024-01-24 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2024/1/31(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | KIT Toranomon Graduate School |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Advanced semiconductor devices and processes (Special feature on IEDM) |
Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
Vice Chair | Tatsuya Usami(Rapidus) |
Secretary | Tatsuya Usami(Tohoku Univ.) |
Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Kunifumi Suzuki |
1st Author's Affiliation | KIOXIA CORPORATION(KIOXIA) |
Date | 2024-01-31 |
Paper # | SDM2023-78 |
Volume (vol) | vol.123 |
Number (no) | SDM-375 |
Page | pp.pp.17-19(SDM), |
#Pages | 3 |
Date of Issue | 2024-01-24 (SDM) |