Presentation 2024-01-31
[Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping
Kunifumi Suzuki,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2023-78
Date of Issue 2024-01-24 (SDM)

Conference Information
Committee SDM
Conference Date 2024/1/31(1days)
Place (in Japanese) (See Japanese page)
Place (in English) KIT Toranomon Graduate School
Topics (in Japanese) (See Japanese page)
Topics (in English) Advanced semiconductor devices and processes (Special feature on IEDM)
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(Rapidus)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping
Sub Title (in English)
Keyword(1)
1st Author's Name Kunifumi Suzuki
1st Author's Affiliation KIOXIA CORPORATION(KIOXIA)
Date 2024-01-31
Paper # SDM2023-78
Volume (vol) vol.123
Number (no) SDM-375
Page pp.pp.17-19(SDM),
#Pages 3
Date of Issue 2024-01-24 (SDM)