Presentation 2024-01-31
[Invited Talk] CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory
Masayoshi Tagami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 3D stacked devices have been developed and manufactured to realize gains in power, performance, area and cost (PPAC) in various devices. In this work, CMOS directly bonded to array (CBA) technology is applied to 3D flash memory. As a result, CMOS and cell performance can be improved, and further 2D and 3D scaling can be achieved. CBA technology is essential to realize PPAC goals for future 3D flash memory.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 3D stacked device / PPAC / Cu direct bonding / 3D flash memory
Paper # SDM2023-76
Date of Issue 2024-01-24 (SDM)

Conference Information
Committee SDM
Conference Date 2024/1/31(1days)
Place (in Japanese) (See Japanese page)
Place (in English) KIT Toranomon Graduate School
Topics (in Japanese) (See Japanese page)
Topics (in English) Advanced semiconductor devices and processes (Special feature on IEDM)
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami(Rapidus)
Secretary Tatsuya Usami(Tohoku Univ.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory
Sub Title (in English)
Keyword(1) 3D stacked device
Keyword(2) PPAC
Keyword(3) Cu direct bonding
Keyword(4) 3D flash memory
1st Author's Name Masayoshi Tagami
1st Author's Affiliation KIOXIA CORPORATION(KIOXIA)
Date 2024-01-31
Paper # SDM2023-76
Volume (vol) vol.123
Number (no) SDM-375
Page pp.pp.9-12(SDM),
#Pages 4
Date of Issue 2024-01-24 (SDM)