| Presentation | 2024-01-31 [Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta, Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstrated in AlSiO/p-type GaN MOSFETs. Transmission electron microscopy observations revealed that the AlN-ILs were grown on GaN epitaxially and therefore could induce polarization charges, similar to AlGaN/GaN. The decrease in the threshold voltage (Vth) with increasing AlN-IL thickness corresponded to the polarization charge density. In addition, insertion of the AlN-IL suppressed the positive bias instability by less than 0.05 V. By controlling the AlN-IL thickness and the channel p-type doping, we controlled the Vth in the range from −3 to 5 V and achieved enhanced channel mobility compared with that for the corresponding MOSFET without an AlN-IL. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOSFET / Polarization Charge / Atomic Layer Deposition / AlN |
| Paper # | SDM2023-75 |
| Date of Issue | 2024-01-24 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2024/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | KIT Toranomon Graduate School |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Advanced semiconductor devices and processes (Special feature on IEDM) |
| Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) |
| Vice Chair | Tatsuya Usami(Rapidus) |
| Secretary | Tatsuya Usami(Tohoku Univ.) |
| Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOSFET |
| Keyword(3) | Polarization Charge |
| Keyword(4) | Atomic Layer Deposition |
| Keyword(5) | AlN |
| 1st Author's Name | Kenji Ito |
| 1st Author's Affiliation | Toyota Central R&D Labs., Inc.(Toyota Central R&D) |
| 2nd Author's Name | Tetsuo Narita |
| 2nd Author's Affiliation | Toyota Central R&D Labs., Inc.(Toyota Central R&D) |
| 3rd Author's Name | Hiroko Iguchi |
| 3rd Author's Affiliation | Toyota Central R&D Labs., Inc.(Toyota Central R&D) |
| 4th Author's Name | Shiro Iwasaki |
| 4th Author's Affiliation | Toyota Central R&D Labs., Inc.(Toyota Central R&D) |
| 5th Author's Name | Daigo Kikuta |
| 5th Author's Affiliation | Toyota Central R&D Labs., Inc.(Toyota Central R&D) |
| 6th Author's Name | Emi Kano |
| 6th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 7th Author's Name | Nobuyuki Ikarashi |
| 7th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 8th Author's Name | Kazuyoshi Tomita |
| 8th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 9th Author's Name | Masahiro Horita |
| 9th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 10th Author's Name | Jun Suda |
| 10th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2024-01-31 |
| Paper # | SDM2023-75 |
| Volume (vol) | vol.123 |
| Number (no) | SDM-375 |
| Page | pp.pp.5-8(SDM), |
| #Pages | 4 |
| Date of Issue | 2024-01-24 (SDM) |