| Presentation | 2024-01-25 [Poster Presentation] Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] Yoshiya Abe, Kenta Yachida, Kazuki Sawai, Mutsumi Kimura, Hidenori Kawanishi, Tokiyoshi Matsuda, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. Therefore, the purpose of this study is to fabricate and evaluate ReRAM using Ga-Sn-O(GTO), an amorphous oxide semiconductor (AOS), to demonstrate its potential for new applications that are low-cost and can be mass-produced. In this study, we fabricated the ReRAM with three-layer of GTO stacked with different resistance values and evaluated their electrical characteristics. The ReRAM exhibited resistance change behavior including negative resistance that was different from unipolar and bipolar systems. In addition, analog-like characteristics were obtained and the switching ratio was improved, indicating the potential for neuromorphic applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ReRAMGTOAmorphous oxide semiconductor (AOS) |
| Paper # | EID2023-3 |
| Date of Issue | 2024-01-18 (EID) |
| Conference Information | |
| Committee | EID / ITE-IDY / IEE-EDD / SID-JC / IEIJ-SSL |
|---|---|
| Conference Date | 2024/1/25(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Masayuki Kanbara(NAIST) |
| Vice Chair | Mitsuhiro Akimoto(Sanyo-Onoda City Univ) / Masanobu Mizusaki(SHARP) |
| Secretary | Mitsuhiro Akimoto(NHK) / Masanobu Mizusaki(Japan Display) |
| Assistant | Munekazu Date(NTT) / Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Hiroko Kominami(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Masahiro Yamaguchi(Tokyo Inst. of Tec.) |
| Paper Information | |
| Registration To | Technical Committee on Electronic Information Displays / Technical Group on Information Display / Technical Meeting on Electron Devices / Society for Information Display Japan Chapter / Division of Solid State Light Sources |
|---|---|
| Language | ENG-JTITLE |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Poster Presentation] Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] |
| Sub Title (in English) | |
| Keyword(1) | ReRAMGTOAmorphous oxide semiconductor (AOS) |
| 1st Author's Name | Yoshiya Abe |
| 1st Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 2nd Author's Name | Kenta Yachida |
| 2nd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 3rd Author's Name | Kazuki Sawai |
| 3rd Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 4th Author's Name | Mutsumi Kimura |
| 4th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 5th Author's Name | Hidenori Kawanishi |
| 5th Author's Affiliation | Ryukoku University(Ryukoku Univ.) |
| 6th Author's Name | Tokiyoshi Matsuda |
| 6th Author's Affiliation | Kindai University(Kindai Univ.) |
| Date | 2024-01-25 |
| Paper # | EID2023-3 |
| Volume (vol) | vol.123 |
| Number (no) | EID-360 |
| Page | pp.pp.5-8(EID), |
| #Pages | 4 |
| Date of Issue | 2024-01-18 (EID) |