| Presentation | 2023-12-22 MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffer layer was promoted under low-temperature and low-V/III-ratio growth conditions. The electron mobility of 1410 cm2/Vs was obtained in the epiwafer with the dislocation density of around 5x108 cm-2. The device with 700-nm gate length exhibited the power cutoff frequency of 99.4GHz. We also examined the dependence of transconductance and parasitic capacitance of the devices on Vd. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | N-polar GaN HEMT / high-resistivity C-doped GaN buffer / auto doping / RF characteristics |
| Paper # | ED2023-63,MWPTHz2023-73 |
| Date of Issue | 2023-12-14 (ED, MWPTHz) |
| Conference Information | |
| Committee | ED / MWPTHz |
|---|---|
| Conference Date | 2023/12/21(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Seiya Sakai(Hokkaido Univ.) / Atsushi Kanno(Nagoya Inst. of Tech.) |
| Vice Chair | Manabu Arai(Nagoya Univ.) / Masayuki Fujita(Osaka Univ.) / Kensuke Ikeda(CRIEPI) |
| Secretary | Manabu Arai(Saga Univ.) / Masayuki Fujita(Mitsubishi Electric) / Kensuke Ikeda(NICT) |
| Assistant | Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Li Yi(Osaka Univ.) / Akira Satou(Tohoku Univ.) / Safumi Suzuki(Tokyo Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwave Photonics and Terahertz Photonic-Electronic Technologies |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer |
| Sub Title (in English) | |
| Keyword(1) | N-polar GaN HEMT |
| Keyword(2) | high-resistivity C-doped GaN buffer |
| Keyword(3) | auto doping |
| Keyword(4) | RF characteristics |
| 1st Author's Name | Yuki Yoshiya |
| 1st Author's Affiliation | NTT Corporation(NTT) |
| 2nd Author's Name | Takuya Hoshi |
| 2nd Author's Affiliation | NTT Corporation(NTT) |
| 3rd Author's Name | Takuya Tsutsumi |
| 3rd Author's Affiliation | NTT Corporation(NTT) |
| 4th Author's Name | Hiroki Sugiyama |
| 4th Author's Affiliation | NTT Corporation(NTT) |
| 5th Author's Name | Fumito Nakajima |
| 5th Author's Affiliation | NTT Corporation(NTT) |
| Date | 2023-12-22 |
| Paper # | ED2023-63,MWPTHz2023-73 |
| Volume (vol) | vol.123 |
| Number (no) | ED-312,MWPTHz-313 |
| Page | pp.pp.46-51(ED), pp.46-51(MWPTHz), |
| #Pages | 6 |
| Date of Issue | 2023-12-14 (ED, MWPTHz) |