| Presentation | 2023-12-08 Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao, Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to be used as a neutralizer for ion thrusters. However, the GOS devices are vulnerable to atomic oxygen (AO). To improve their oxidation resistance, hexagonal boron nitride (h-BN) was deposited by thermal chemical vapor deposition (CVD), and aluminum oxide was deposited by atomic layer deposition (ALD) as a protective layer. After the exposure to the O2 radical generated by oxygen plasma, we measured the Raman spectra of the graphene electrodes and optical transmittance of the protective films. The results showed that a 4.06 nm aluminum oxide protective layer deposited by ALD protected the graphene even after 30 minutes of oxygen plasma exposure, corresponding to about 100 hours of operation in low earth orbit. We also measured electron emission characteristics and found that the GOS electron emission device with an alumina protective layer was able to emit electrons. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Graphene-Oxide-Semiconductor / Graphene / Hexagonal Boron Nitride / Aluminum Oxide / Low Earth Orbit |
| Paper # | ED2023-48 |
| Date of Issue | 2023-11-30 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2023/12/7(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | WINC AICHI |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Applications of electron and ion beam |
| Chair | Seiya Sakai(Hokkaido Univ.) |
| Vice Chair | Manabu Arai(Nagoya Univ.) |
| Secretary | Manabu Arai(Saga Univ.) |
| Assistant | Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties |
| Sub Title (in English) | |
| Keyword(1) | Graphene-Oxide-Semiconductor |
| Keyword(2) | Graphene |
| Keyword(3) | Hexagonal Boron Nitride |
| Keyword(4) | Aluminum Oxide |
| Keyword(5) | Low Earth Orbit |
| 1st Author's Name | Ren Mutsukawa |
| 1st Author's Affiliation | Yokohama National University(YNU) |
| 2nd Author's Name | Yoshinori Takao |
| 2nd Author's Affiliation | Yokohama National University(YNU) |
| 3rd Author's Name | Masayoshi Nagao |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Hiromasa Murata |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Katsuhisa Murakami |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2023-12-08 |
| Paper # | ED2023-48 |
| Volume (vol) | vol.123 |
| Number (no) | ED-297 |
| Page | pp.pp.39-42(ED), |
| #Pages | 4 |
| Date of Issue | 2023-11-30 (ED) |